Silicon carbide semiconductor device and manufacturing method therefor

Abstract

The present application discloses a silicon carbide semiconductor device and a manufacturing method therefor. An epitaxial wafer comprises a semiconductor substrate; a first epitaxial layer provided on the surface of the semiconductor substrate; al second epitaxial layer provided on the surface of the side of the first epitaxial layer facing away from the semiconductor substrate; and a third epitaxial layer provided on the surface of the side of the second epitaxial layer facing away from the first epitaxial layer. A gate is formed by means of a trench formed in the third epitaxial layer, and ion implantation can also be performed in the second epitaxial layer on the basis of the trench before the gate is formed, such that a doped region inverted with the second epitaxial layer is formed in the second epitaxial layer.

Dependencies are inferred from the claim text.