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US 8,835,978 B2Granted
Lateral transistor on polymer
AssigneeInfineon Technologies AG
InventorsAnton Mauder, Eric Graetz
Life of this patent
Estimating the term…
Abstract
Representative implementations of devices and techniques provide a high-voltage device on a semiconductor substrate. An insulating polymer layer is formed on an opposite surface to the high-voltage device, the insulating polymer layer having a thickness of at least twice that of the semiconductor substrate.
Claims25
A device, comprising:
- a thin-film semiconductor substrate;
- a transistor formed on a first surface of the thin-film semiconductor substrate;
- and
- an insulating polymer layer formed on a second surface of the thin-film semiconductor substrate, the insulating polymer layer having a thickness that is at least twice as thick as a thickness of the thin-film semiconductor substrate.
1 more element
An integrated circuit, comprising:
- a laterally arranged high-voltage semiconductor device formed on a first surface of a silicon substrate;
- and
- an insulating silicone layer formed on a second surface of the silicon substrate, a thickness of the silicon substrate being reduced prior to formation of the insulating silicone layer, the insulating silicone layer having a thickness that is at least twice as thick as the thickness of the silicon substrate.
A method, comprising:
- forming a transistor on a first surface of a semiconductor substrate;
- reducing a thickness of the semiconductor substrate from a first thickness to a second lesser thickness;
- and
- forming a polymer layer on a second surface of the semiconductor substrate, the polymer layer having a thickness that is at least twice as thick as the second thickness.
1 more element
An integrated circuit, comprising:
- at least two serially connected high-voltage semiconductor devices formed on a first surface of a silicon substrate;
- and
- an insulating silicone layer formed on a second surface of the silicon substrate, a thickness of the silicon substrate being reduced prior to formation of the insulating silicone layer, the insulating silicone layer having a thickness that is at least twice as thick as the thickness of the silicon substrate.
Dependencies are inferred from the claim text.