H10D 12/417
Having a drift region having a doping concentration that is higher at
Official title: {having a drift region having a doping concentration that is higher at the collector side relative to other parts of the drift region}
H10D12/417 (Having a drift region having a doping concentration that is higher at) appears on 18 US grants and 159 published applications in this corpus.
Search patents in H10D- Granted patents
- 18
- Published applications
- 159
- Assignees
- 36
- Inventors
- 260
- Latest grant
- 30 Dec 2025
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1998 | 1 | 0 |
| 1999 | 1 | 0 |
| 2000 | 0 | 0 |
| 2001 | 1 | 0 |
| 2002 | 0 | 0 |
| 2003 | 0 | 0 |
| 2004 | 0 | 0 |
| 2005 | 0 | 0 |
| 2006 | 0 | 0 |
| 2007 | 0 | 0 |
| 2008 | 0 | 0 |
| 2009 | 0 | 0 |
| 2010 | 0 | 1 |
| 2011 | 0 | 0 |
| 2012 | 1 | 0 |
| 2013 | 0 | 0 |
| 2014 | 0 | 0 |
| 2015 | 1 | 2 |
| 2016 | 0 | 1 |
| 2017 | 2 | 1 |
| 2018 | 2 | 3 |
| 2019 | 2 | 1 |
| 2020 | 0 | 2 |
| 2021 | 1 | 0 |
| 2022 | 1 | 1 |
| 2023 | 1 | 1 |
| 2024 | 0 | 5 |
| 2025 | 4 | 88 |
| 2026 | 0 | 53 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
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Most cited
By later US patents
- Methods for making semiconductor devices by low temperature direct bonding37US 6,194,290 B1Intersil Corporation · 2001
- Lateral insulated-gate bipolar transistor and manufacturing method therefor3US 10,084,073 B2Csmc Technologies Fab1 Co., Ltd. · 2018
- Composite controlled semiconductor device and power conversion device using the same3US 5,780,917 AHitachi, Ltd. · 1998
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