Semiconductor device and method of manufacturing semiconductor device

A method of manufacturing a semiconductor device, the method comprising:

• as a first process, implanting a first dopant ion in a semiconductor layer provided on an insulating film;
• as a second process, implanting a second dopant ion in a first region of the semiconductor layer having the first dopant ion implanted therein;
• as a third process, implanting a third dopant ion in a second region of the semiconductor layer having the first dopant ion implanted therein;
• as a fourth process, activating the first dopant ion, the second dopant ion, and the third dopant ion, thereby forming
• an anode region in the first region implanted with the second dopant ion,
• a cathode region in the second region implanted with the third dopant ion, and
• a low-concentration region in a third region of the semiconductor layer, the third region being implanted with the first dopant ion and being exclusive of the second region and the first region;
• as a fifth process, forming an interlayer insulating film covering the semiconductor layer;
• as a sixth process, forming a first contact hole penetrating through the interlayer insulating film and exposing a portion of the cathode region, and forming a second contact hole penetrating through the interlayer insulating film and exposing a portion of the anode region;
• as a seventh process, forming a metal film covering the interlayer insulating film;
• and
• as an eighth process, selectively removing the metal film thereby forming a cathode electrode connected to the cathode region via the first contact hole, and forming an anode electrode connected to the anode region via the second contact hole, the cathode electrode or the anode electrode being formed so as to overlap an upper portion of the low-concentration region in a top view of the semiconductor device.