Semiconductor device

A multilayered semiconductor device comprising:

• a substrate comprising n-type doped silicon carbide (SiC);
• an epitaxial transition layer comprising a first semiconductor oxide material or SiC, wherein the epitaxial transition layer is on a surface of the substrate;
• an epitaxial oxide layer comprising the first semiconductor oxide material, wherein the epitaxial oxide layer is in contact with the epitaxial transition layer;
• and
• a metal layer above the epitaxial oxide layer,
• wherein the epitaxial transition layer comprises a p-type doping density that is at least an order of magnitude greater than an n-type doping density of the epitaxial oxide layer, and
• wherein the epitaxial transition layer further comprises a variable p-type doping density that varies in a growth direction that is approximately perpendicular to a top surface of the substrate.

A multilayered semiconductor device comprising:

• a substrate comprising p-type doped silicon carbide (SiC);
• an epitaxial oxide layer comprising a first semiconductor oxide material, wherein the epitaxial oxide layer is above the substrate with respect to a growth direction, wherein the epitaxial oxide layer comprises n-type conductivity such that the substrate and the epitaxial oxide layer form a p/n junction;
• a first metal layer above the epitaxial oxide layer with respect to the growth direction;
• a second metal layer in contact with the substrate;
• and
• an epitaxial transition layer between the substrate and the epitaxial oxide layer, wherein the epitaxial transition layer comprises a semiconductor oxide material or SiC,
• wherein the epitaxial oxide layer, the epitaxial transition layer, or the epitaxial oxide layer and the epitaxial transition layer, comprise a variable doping density with respect to the growth direction.