Semiconductor device

A gate controlled bipolar semiconductor device comprising:

• a collector region of a first conductivity type;
• a drift region of a second conductivity type located over the collector region;
• a body region of a first conductivity type located over the drift region;
• a plurality of first contact regions of a second conductivity type located above the body region and having a higher doping concentration than the body region;
• a second contact region of a first conductivity type located laterally adjacent to the plurality of first contact regions, the second contact region having a higher doping concentration than the body region;
• at least two active trenches each extending from a surface into the drift region;
• an emitter trench extending from the surface into the drift region;
• wherein each first contact region adjoins an active trench of the at least two active trenches so that, in use, a channel is formed along said each active trench and within the body region;
• wherein the second contact region adjoins the emitter trench;
• and
• wherein the emitter trench is located between two active trenches of the at least two active trenches, and
• wherein the at least two active trenches and the emitter trench are laterally spaced in a first dimension, and wherein current flows in the device in a second dimension substantially traverse to the first dimension, and
• wherein the at least two active trenches and the emitter trench extend in a third dimension of the device, and wherein the second contact region is formed within a part of the emitter trench that is directly extending into the drift region, and wherein the second contact region extends from an outer surface of a vertical sidewall of the emitter trench in the first dimension and extends into the emitter trench in the third dimension of the device.