Lateral insulated-gate bipolar transistor and manufacturing method therefor

A method of manufacturing a lateral insulated-gate bipolar transistor, comprising the following steps of:

• providing a substrate having a drift region;
• implanting P-type ions into the drift region via a high energy ions implantation, thus forming a P-type buried layer;
• implanting N-type ions on the P-type buried layer, thus forming an N-type buffer region;
• performing a thermal drive-in to diffuse the implanted P-type ions and N-type ions;
• implanting P-type ions into the drift region, performing thermal annealing to form a P-type body region;
• performing lithography and etching to form a trench extending from a surface of the N-type buffer region into the P-type buried layer;
• forming an oxide layer on an inner surface of the trench;
• filling the trench with polysilicon;
• and
• performing ion implantation to form a P+ collector region on the surface of the N-type buffer region, and forming a P+ region and an N+ region on a surface of the P-type body region;
• wherein the P+ collector region is in contact with the oxide layer.