Semiconductor device

A semiconductor device having an IGBT region and a diode region in the same chip,

• wherein an IGBT in the IGBT region has a drift layer of a first conductivity type, a body layer of a second conductivity type, a first contact layer of the second conductivity type, which is connected to the body layer and has an impurity concentration higher than that of the body layer, and an emitter electrode connected to the first contact layer,
• a diode in the diode region has a first semiconductor layer of the second conductivity type, a second contact layer of the second conductivity type, which is connected to the first semiconductor layer and has an impurity concentration higher than that of the first semiconductor layer, and a first electrode connected to the second contact layer and the emitter electrode,
• an area of the second contact layer of the diode in a boundary portion vicinity near a boundary portion between the IGBT region and the diode region is smaller than an area of the second contact layer of the diode in a position far from the boundary portion vicinity, and
• an area of the first contact layer of the IGBT in the boundary portion vicinity is smaller than an area of the first contact layer of the IGBT in a position far from the boundary portion vicinity.