H10D 12/415
Having edge termination structures
Official title: {having edge termination structures}
H10D12/415 (Having edge termination structures) appears on 43 US grants and 184 published applications in this corpus.
Search patents in H10D- Granted patents
- 43
- Published applications
- 184
- Assignees
- 34
- Inventors
- 303
- Latest grant
- 15 Sep 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1983 | 2 | 0 |
| 1984 | 0 | 0 |
| 1985 | 0 | 0 |
| 1986 | 0 | 0 |
| 1987 | 1 | 0 |
| 1988 | 1 | 0 |
| 1989 | 2 | 0 |
| 1990 | 1 | 0 |
| 1991 | 0 | 0 |
| 1992 | 2 | 0 |
| 1993 | 0 | 0 |
| 1994 | 2 | 0 |
| 1995 | 0 | 0 |
| 1996 | 0 | 0 |
| 1997 | 1 | 0 |
| 1998 | 2 | 0 |
| 1999 | 0 | 0 |
| 2000 | 1 | 0 |
| 2001 | 0 | 0 |
| 2002 | 0 | 1 |
| 2003 | 0 | 0 |
| 2004 | 2 | 0 |
| 2005 | 0 | 0 |
| 2006 | 0 | 0 |
| 2007 | 0 | 0 |
| 2008 | 0 | 0 |
| 2009 | 0 | 1 |
| 2010 | 0 | 1 |
| 2011 | 1 | 2 |
| 2012 | 1 | 2 |
| 2013 | 1 | 2 |
| 2014 | 1 | 3 |
| 2015 | 1 | 3 |
| 2016 | 4 | 4 |
| 2017 | 2 | 4 |
| 2018 | 3 | 0 |
| 2019 | 1 | 2 |
| 2020 | 2 | 4 |
| 2021 | 2 | 0 |
| 2022 | 3 | 3 |
| 2023 | 0 | 1 |
| 2024 | 1 | 10 |
| 2025 | 2 | 68 |
| 2026 | 1 | 73 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
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- Semiconductor device and method for manufacturing24 Sep 2026US 2026/0293173 A1Kabushiki Kaisha Toshiba
- Semiconductor device24 Sep 2026US 2026/0293175 A1Fuji Electric Co., Ltd.
- Semiconductor device24 Sep 2026US 2026/0293288 A1Mitsubishi Electric Corporation
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Most cited
By later US patents
- Lateral semiconductor component in thin-film SOI technology171US 6,693,327 B2Eupec Europaische Gesellschaft fur Leistungshalbleiter mbH · 2004
- Conductivity modulated MOSFET66US 4,672,407 AKabushiki Kaisha Toshiba · 1987
- Floating guard region and process of manufacture for semiconductor reverse conducting switching device using spaced MOS transistors having a common drain region59US 4,414,560 AInternational Rectifier Corporation · 1983
- Planar structure for high voltage semiconductor devices with gaps in glassy layer over high field regions54US 4,412,242 AInternational Rectifier Corporation · 1983
- Lateral conductivity modulated MOSFET47US 4,928,155 AKabushiki Kaisha Toshiba · 1990