Trench FET device and method of manufacturing trench FET device
AssigneeHuawei Technologies Co., Ltd.
InventorsMo huai Chang, Junqing He
Life of this patent
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Abstract
A trench field-effect transistor (FET) device includes a plurality of active trenches extending along a first axis and distributed along a second axis perpendicular to the first axis. Each active trench includes a gate electrode and a shield electrode. The trench FET device further includes a plurality of termination trenches fully filled with a dielectric material, extending along the second axis, and arranged adjacent to the active trenches. In addition, the shield electrode of each of the active trenches abuts a respective one of the plurality of termination trenches at each end.
Claims20
A trench field-effect transistor (FET) device comprising:
- a plurality of active trenches extending along a first axis and distributed along a second axis perpendicular to the first axis, wherein each of the active trenches comprises a gate electrode and a shield electrode;
- and
- a plurality of termination trenches extending along the second axis and, arranged adjacent to the active trenches, wherein each of the termination trenches is fully filled with a dielectric material,
- wherein the shield electrode is disposed to abut with a respective one of the termination trenches at each end of the shield electrode,
- wherein one or more of the active trenches further comprises an end region extending beyond the respective one of the termination trenches, and
- wherein the end region is fully filled with the dielectric material.
A method of manufacturing a trench field-effect transistor (FET) device and comprising:
- forming an epitaxial layer on a substrate;
- removing material from the epitaxial layer to form a plurality of active trenches extending along a first axis and distributed along a second axis perpendicular to the first axis and to form a plurality of termination trenches extending along the second axis and arranged adjacent to the active trenches;
- depositing a first dielectric material to fully fill each of the termination trenches and the active trenches;
- depositing and developing a mask to cover the termination trenches;
- removing the first dielectric material from the active trenches;
- removing the mask;
- forming a gate electrode in each of the active trenches;
- forming a shield electrode disposed in each of the active trenches to abut with a respective one of the termination trenches at each end of the shield electrode.
Dependencies are inferred from the claim text.