Lateral semiconductor component in thin-film SOI technology
AssigneeEupec Europaische Gesellschaft fur Leistungshalbleiter mbH
InventorsDirk Priefert, Ralf Rudolf, Viktor Boguszewicz, Frank Michalzik, Rolf Buckhorst
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Abstract
A lateral semiconductor element (10) in thin-film SOI technology comprises an insulator layer (14) which rests on a substrate (12) and is buried under a thin silicon film (16), on top of which the source, or anode, contact (18) and the drain, or cathode, contact (22) are mounted. The anode contact (18) and the cathode contact (22) each lie over separate shield regions (28,30) within substrate (12), with the anode contact (18) being electrically connected with substrate (12).
Claims15
A lateral semiconductor component in thin-film SOI technology, comprising:
- a substrate,
- an insulating layer which rests on the substrate,
- a thin film of doped, non-insulating silicon, said thin silicon film being layered directly on top of the insulating layer,
- separate shield regions within the substrate,
- a source/anode contact mounted on top of the insulating layer, the source/anode contact lying over one of the shield regions and electrically connected with the substrate, and
- a drain/cathode contact mounted on top of the insulating layer, the drain/cathode contact lying over another one of the shield regions.
Dependencies are inferred from the claim text.