Semiconductor device

A semiconductor device including a transistor region and a diode region in a semiconductor substrate, the semiconductor device comprising:

• a gate runner portion that supplies a gate potential to the transistor region;
• a well region of a first conductivity type provided below the gate runner portion;
• an interlayer dielectric film provided above the semiconductor substrate;
• one or more first contact portions provided in the interlayer dielectric film in the diode region and extending in a first direction such that, when seen from above, an end of the one or more first contact portions does not overlap the well region;
• and
• one or more second contact portions provided in the interlayer dielectric film in the transistor region and extending in the first direction such that, when seen from above, an end of the one or more second contact portions overlaps the well region.

A method of manufacturing a semiconductor device including a transistor region and a diode region in a semiconductor substrate, the semiconductor device comprising a gate runner portion that supplies a gate potential to the transistor region, a well region of a first conductivity type provided below the gate runner portion, and a cathode region of a second conductivity type provided in the diode region and exposed at a lower surface side of the semiconductor substrate, the method comprising:

• forming an interlayer dielectric film above the semiconductor substrate;
• forming a first contact portion that includes (i) one or more inner contact portions provided in a first region of the interlayer dielectric film and extending in a first direction and (ii) one or more outer contact portions provided in a second region of the interlayer dielectric film and extending in the first direction, the first region being located above and overlapping the cathode region, and the second region being located on an outside of the one or more inner contact portions in the first direction;
• and
• forming one or more second contact portions in the interlayer dielectric film in the transistor region and extending in the first direction such that at least one end of the one or more second contact portions extends further outside in the first direction than an end of the one or more outer contact portions,
• wherein the one or more inner contact portions are spaced apart from each other in a second direction perpendicular to the first direction,
• wherein the one or more outer contact portions are spaced apart from each other in the second direction,
• wherein the one or more outer contact portions are provided between the well region and the one or more inner contact portions in the first direction, and
• wherein the one or more outer contact portions are provided between the one or more second contact portions in the second direction.