Semiconductor device, semiconductor device control method, and semiconductor device manufacturing method to increase allowable range of transition time difference between two signals

A semiconductor device comprising:

• a semiconductor substrate of a first conductivity type;
• a first semiconductor layer of the first conductivity type located in a surface layer of the semiconductor substrate;
• a second semiconductor layer of the first conductivity type located in the surface layer of the semiconductor substrate to be excluded from the first semiconductor layer, the second semiconductor layer having a higher peak impurity concentration than the semiconductor substrate;
• a third semiconductor layer of a second conductivity type located on an opposite side of the first semiconductor layer and the second semiconductor layer from the semiconductor substrate;
• a fourth semiconductor layer of the second conductivity type selectively located on an opposite side of the third semiconductor layer from the semiconductor substrate, the fourth semiconductor layer having a higher peak impurity concentration than the third semiconductor layer;
• a fifth semiconductor layer of the first conductivity type located on an opposite side of the third semiconductor layer from the semiconductor substrate to be excluded from the fourth semiconductor layer, the fifth semiconductor layer having a higher peak impurity concentration than the second semiconductor layer;
• a sixth semiconductor layer of the second conductivity type located on an opposite side of the semiconductor substrate from the first semiconductor layer, the second semiconductor layer, the third semiconductor layer, the fourth semiconductor layer, and the fifth semiconductor layer;
• a first electrode extending through the fifth semiconductor layer and the third semiconductor layer to reach the first semiconductor layer at a position farther from the sixth semiconductor layer than a boundary between the second semiconductor layer and the semiconductor substrate is, the first electrode having an insulating surface;
• a second electrode extending through the second semiconductor layer, the fourth semiconductor layer, and the third semiconductor layer or through the second semiconductor layer, the fifth semiconductor layer, and the third semiconductor layer, to reach the semiconductor substrate, the second electrode being closer to the sixth semiconductor layer than the first semiconductor layer and the second semiconductor layer are, the second electrode having an insulating surface;
• and
• a third electrode extending through the fourth semiconductor layer and the third semiconductor layer to reach the semiconductor substrate, the third electrode being closer to the sixth semiconductor layer than the first semiconductor layer and the second semiconductor layer are, the third electrode separating the first semiconductor layer from the second semiconductor layer, the third electrode and the second electrode sandwiching the second semiconductor layer, the third electrode having an insulating surface.