H10D 12/441
Vertical igbts
Official title: {Vertical IGBTs}
H10D12/441 (Vertical igbts) appears on 5,203 US grants and 5,980 published applications in this corpus.
Search patents in H10D- Granted patents
- 5,203
- Published applications
- 5,980
- Assignees
- 474
- Inventors
- 4,119
- Latest grant
- 6 Oct 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1980 | 1 | 0 |
| 1981 | 0 | 0 |
| 1982 | 2 | 0 |
| 1983 | 1 | 0 |
| 1984 | 3 | 0 |
| 1985 | 1 | 0 |
| 1986 | 7 | 0 |
| 1987 | 8 | 0 |
| 1988 | 6 | 0 |
| 1989 | 10 | 0 |
| 1990 | 17 | 0 |
| 1991 | 29 | 0 |
| 1992 | 30 | 0 |
| 1993 | 26 | 0 |
| 1994 | 31 | 0 |
| 1995 | 29 | 0 |
| 1996 | 37 | 0 |
| 1997 | 41 | 0 |
| 1998 | 55 | 0 |
| 1999 | 44 | 0 |
| 2000 | 59 | 0 |
| 2001 | 57 | 24 |
| 2002 | 46 | 61 |
| 2003 | 63 | 64 |
| 2004 | 73 | 65 |
| 2005 | 54 | 85 |
| 2006 | 50 | 74 |
| 2007 | 49 | 112 |
| 2008 | 42 | 101 |
| 2009 | 69 | 111 |
| 2010 | 103 | 141 |
| 2011 | 116 | 144 |
| 2012 | 129 | 195 |
| 2013 | 155 | 198 |
| 2014 | 190 | 283 |
| 2015 | 294 | 424 |
| 2016 | 344 | 478 |
| 2017 | 417 | 431 |
| 2018 | 375 | 421 |
| 2019 | 392 | 402 |
| 2020 | 343 | 334 |
| 2021 | 304 | 299 |
| 2022 | 245 | 342 |
| 2023 | 214 | 337 |
| 2024 | 195 | 307 |
| 2025 | 251 | 308 |
| 2026 | 196 | 239 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Subgroups
Granted patents
Recent patents
- Semiconductor device and manufacturing method6 Oct 2026US 12,757,452 B2Hitachi Energy Ltd
- Semiconductor device6 Oct 2026US 12,757,479 B2Fuji Electric Co., Ltd.
- Insulating-gate bipolar transistors including a reverse conducting diode29 Sep 2026US 12,751,025 B2GLOBALFOUNDRIES U. S. Inc.
- Semiconductor device, semiconductor device control method, and semiconductor device manufacturing method to increase allowable range of transition time difference between two signals29 Sep 2026US 12,751,026 B2Mitsubishi Electric Corporation
- Cell structures of insulated gate bipolar transistor IGBT with a control gate and a carrier storage layer, and their manufacturing methods29 Sep 2026US 12,751,055 B2Nexperia B. V.
- Semiconductor device8 Oct 2026US 2026/0312580 A1Fuji Electric Co., Ltd.
- Semiconductor device8 Oct 2026US 2026/0313992 A1Fuji Electric Co., Ltd.
- Double gate transistor device and method of operating1 Oct 2026US 2026/0303088 A1Infineon Technologies Austria AG
- Igbt device and cell structure thereof, and manufacturing method for cell structure1 Oct 2026US 2026/0304869 A1Gree Electric Appliances, Inc. of Zhuhai
- Semiconductor device1 Oct 2026US 2026/0304888 A1Fuji Electric Co., Ltd.
Most cited
By later US patents
- Method of maintaining the state of semiconductor memory having electrically floating body transistor362US 8,130,547 B2Zeno Semiconductor, Inc. · 2012
- Method of maintaining the state of semiconductor memory having electrically floating body transistor337US 8,514,623 B2Zeno Semiconductor, Inc. · 2013
- Integrated circuit including inverted dielectric isolation331US 6,084,284 A2000
- Field effect-controlled semiconductor component273US 6,184,555 B2Siemens Aktiengesellschaft · 2001
- Vertical power mosfet having thick metal layer to reduce distributed resistance258US 5,665,996 ASiliconix Incorporated · 1997