H10D 12/491
Having both emitter contacts and collector contacts in the same substrate side
Official title: {having both emitter contacts and collector contacts in the same substrate side}
H10D12/491 (Having both emitter contacts and collector contacts in the same substrate side) appears on 84 US grants and 58 published applications in this corpus.
Search patents in H10D- Granted patents
- 84
- Published applications
- 58
- Assignees
- 49
- Inventors
- 166
- Latest grant
- 2 Jun 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1986 | 1 | 0 |
| 1987 | 0 | 0 |
| 1988 | 0 | 0 |
| 1989 | 0 | 0 |
| 1990 | 2 | 0 |
| 1991 | 1 | 0 |
| 1992 | 3 | 0 |
| 1993 | 3 | 0 |
| 1994 | 3 | 0 |
| 1995 | 3 | 0 |
| 1996 | 4 | 0 |
| 1997 | 5 | 0 |
| 1998 | 4 | 0 |
| 1999 | 3 | 0 |
| 2000 | 4 | 0 |
| 2001 | 1 | 0 |
| 2002 | 1 | 0 |
| 2003 | 0 | 1 |
| 2004 | 0 | 0 |
| 2005 | 0 | 0 |
| 2006 | 1 | 2 |
| 2007 | 0 | 1 |
| 2008 | 1 | 1 |
| 2009 | 0 | 1 |
| 2010 | 0 | 0 |
| 2011 | 2 | 1 |
| 2012 | 1 | 1 |
| 2013 | 0 | 0 |
| 2014 | 3 | 2 |
| 2015 | 2 | 5 |
| 2016 | 5 | 8 |
| 2017 | 5 | 8 |
| 2018 | 9 | 7 |
| 2019 | 5 | 3 |
| 2020 | 2 | 5 |
| 2021 | 3 | 0 |
| 2022 | 1 | 2 |
| 2023 | 1 | 5 |
| 2024 | 2 | 2 |
| 2025 | 2 | 2 |
| 2026 | 1 | 1 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- Semiconductor device2 Jun 2026US 12,648,210 B2Rohm Co., Ltd.
- Semiconductor arrangement and method of manufacture28 Oct 2025US 12,457,759 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Semiconductor device and manufacturing method of semiconductor device7 Oct 2025US 12,439,622 B2Fuji Electric Co., Ltd.
- Semiconductor device, preparation method therefor and electrical equipment thereof19 Mar 2024US 11,935,845 B2Guangdong Midea White Home Appliance Technology Innovation Center Co., Ltd.
- Semiconductor device, battery protection circuit, and power management circuit6 Feb 2024US 11,894,456 B2Nuvoton Technology Corporation Japan
- Structure with emitter contact wider than emitter terminal and related method9 Jul 2026US 2026/0198026 A1GLOBALFOUNDRIES U. S. Inc.
- Semiconductor arrangement and method of manufacture20 Nov 2025US 2025/0359099 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Semiconductor device23 Jan 2025US 2025/0031396 A1Mitsubishi Electric Corporation
- Insulated gate bipolar transistor with super junction structure, and preparation method therefor29 Aug 2024US 2024/0290827 A1China Resources Microelectronics (Chongqing) Co., Ltd.
- Semiconductor device and electronic device22 Feb 2024US 2024/0063216 A1Infineon Technologies AG
Most cited
By later US patents
- Semiconductor device having lateral IGBT190US 6,064,086 AKabushiki Kaisha Toshiba · 2000
- Lateral IGBT185US 5,731,603 AKabushiki Kaisha Toshiba · 1998
- Semiconductor integrated circuit unit182US 5,412,558 AHitachi Haramachi Semiconductor Ltd. · 1995
- Self turn-off insulated-gate power semiconductor device with injection-enhanced transistor structure84US 5,329,142 AKabushiki Kaisha Toshiba · 1994
- Lateral double-diffused MOS transistor devices suitable for source-follower applications78US 4,626,879 ANorth American Philips Corporation · 1986