US 5,731,603 AGranted

Lateral IGBT

AssigneeKabushiki Kaisha Toshiba

InventorsAkio Nakagawa, Tomoko Matsudai, Hideyuki Funaki

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Abstract

A sub-gate electrode is arranged to face, through a gate insulating film, a surface of a first p-type base layer which is interposed between a first n-type source layer and an n-type drift layer, and a surface of a second p-type base layer which is interposed between a second n-type source layer and the n-type drift layer and faces the first p-type base layer. A main gate electrode is arranged to face, through a gate insulating film, a surface of the second p-type base layer which is interposed between the second n-type source layer and the n-type drift layer and does not face the first p-type base layer. Three n-type MOSFETs are constructed such that one n-type channel is to be formed in the first p-type base layer and two n-type channels are to be formed in the second p-type base layer. The three channels are to be formed, so that the channel width is effectively enlarged and the current density is increased. The second p-type base layer has a length of 10 .mu.m or less in the drifting direction.

Claims14

Dependent claims

A lateral IGBT comprising:

a drift layer of a first conductivity type formed by using a semiconductor active layer of a high resistance arranged on an insulating film;
a drain layer of a second conductivity type comprising first and second portions formed in a common surface of said drift layer;
a base layer of the second conductivity type formed in said common surface of said drift layer between said first and second portions of said drain layer;
a source layer of the first conductivity type formed in a surface of said base layer;
a drain electrode arranged in contact with said drain layer;
a source electrode arranged in contact with said source and base layers;
and
a main gate electrode comprising first and second portions facing, through a gate insulating film, surfaces of said base layer which are interposed between said source layer and said drift layer, and are located on sides facing said first and second portions of said drain layer, respectively,
wherein said base layer comprises first and second portions facing each other through an intervening portion which is part of said drift layer,
said source layer comprises first and second portions respectively formed in surfaces of said first and second portions of said base layer, and
a sub-gate electrode is arranged to face, through a gate insulating film, a surface of said first portion of said base layer which is interposed between said first portion of said source layer and said intervening portion, and a surface of said second portion of said base layer which is interposed between said second portion of said source layer and said intervening portion.

8 more elements

Dependencies are inferred from the claim text.

Facts

Application: 08/701,500Filed 22 Aug 1996
Priority: JP 7-21635024 Aug 1995
Granted: 24 Mar 1998
Term ends: Not estimatedThe source records don’t support an estimate.

Classification5 codes

H10D 12/01
Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]: manufacture or treatment
H10D 12/421
Insulated-gate bipolar transistors [IGBT]: on insulating layers or insulating substrates, e.g. thin-film IGBTs
H10D 12/491
Vertical IGBTs: having both emitter contacts and collector contacts in the same substrate side
H10D 62/127
Top-view geometrical layouts of the regions or the junctions: of cellular field-effect devices, e.g. multicellular DMOS transistors or IGBTs