US 12,439,622 B2Granted

Semiconductor device and manufacturing method of semiconductor device

AssigneeFuji Electric Co., Ltd.

InventorsKaname Mitsuzuka, Tohru Shirakawa

Life of this patent

Estimating the term…

Loading patent…

Abstract

Provided is a semiconductor device including a gate trench portion and a first trench portion adjacent to the gate trench portion. The device may include a first conductivity type drift region provided in a semiconductor substrate, a second conductivity type base region provided above the drift region, a first conductivity type emitter region provided above the base region and having a doping concentration higher than that of the drift region, and a second conductivity type contact region provided above the base region and having a doping concentration higher than that of the base region. The contact region includes a first contact portion provided on a front surface of the substrate, and a second contact portion having a doping concentration different from that of the first contact portion and provided alternately with the first contact portion in a trench extending direction on a side wall of the first trench portion.

Claims23

Dependent claims

A semiconductor device comprising a gate trench portion and a first trench portion adjacent to the gate trench portion, the semiconductor device comprising:

a drift region of a first conductivity type, which is provided in a semiconductor substrate;
a base region of a second conductivity type, which is provided above the drift region;
an emitter region of the first conductivity type, which is provided above the base region and has a doping concentration higher than a doping concentration of the drift region;
and
a contact region of the second conductivity type, which is provided above the base region and has a doping concentration higher than a doping concentration of the base region,
wherein the contact region includes a first contact portion provided on a front surface of the semiconductor substrate, and a second contact portion which has a doping concentration different from a doping concentration of the first contact portion and is provided alternately with the first contact portion in a trench extending direction on a side wall of the first trench portion.

3 more elements

Dependencies are inferred from the claim text.

Facts

Application: 18/069,203Filed 20 Dec 2022
Priority: JP 2022-0152362 Feb 2022
Published: US 2023/0246097 A13 Aug 2023
Granted: 7 Oct 2025
Term ends: Not estimatedThe source records don’t support an estimate.

Classification13 codes

H10D 12/491
Vertical IGBTs: having both emitter contacts and collector contacts in the same substrate side
H10D 12/038
Of vertical IGBTs: having a recessed gate, e.g. trench-gate IGBTs
H10D 12/481
Having non-planar surfaces, e.g. having trenches, recesses or pillars in the surfaces of the emitter, base or collector regions: having gate…
H10D 62/127
Top-view geometrical layouts of the regions or the junctions: of cellular field-effect devices, e.g. multicellular DMOS transistors or IGBTs