Semiconductor device, preparation method therefor and electrical equipment thereof
AssigneesGuangdong Midea White Home Appliance Technology Innovation Center Co., Ltd., Midea Group Co., Ltd.
InventorsHao Lan, Yuxiang Feng
Life of this patent
Estimating the term…
Abstract
Disclosed are a semiconductor device, a preparation method therefor and electrical equipment thereof. The semiconductor device includes: a silicon substrate on which an emitter, a gate, and a collector are formed; a bootstrap electrode formed on the silicon substrate; and an insulating layer, formed on the silicon substrate and disposed between the emitter and the bootstrap electrode. A bootstrap capacitor is formed between the emitter and the bootstrap electrode.
Claims15
A semiconductor device, comprising:
- a silicon substrate, wherein an emitter, a gate, and a collector are formed on the silicon substrate;
- a bootstrap electrode, formed on the silicon substrate;
- and
- an insulating layer, formed on the silicon substrate and disposed between the emitter and the bootstrap electrode;
- wherein a bootstrap capacitor is formed between the emitter and the bootstrap electrode, wherein a groove is defined on the silicon substrate, the insulating layer is formed on an inner wall of the groove, and the bootstrap electrode is disposed in the groove.
An electrical equipment, comprising a semiconductor device:
- wherein the semiconductor device comprises:
- a silicon substrate, wherein an emitter, a gate, and a collector are formed on the silicon substrate;
- a bootstrap electrode, formed on the silicon substrate;
- and
- an insulating layer, formed on the silicon substrate and disposed between the emitter and the bootstrap electrode;
- wherein a bootstrap capacitor is formed between the emitter and the bootstrap electrode, wherein a groove is defined on the silicon substrate, the insulating layer is formed on an inner wall of the groove, and the bootstrap electrode is disposed in the groove.
Dependencies are inferred from the claim text.