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US 12,457,759 B2Granted
Semiconductor arrangement and method of manufacture
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorHung-Te Lin
Life of this patent
Estimating the term…
Abstract
A semiconductor arrangement and method of manufacture is provided. In some embodiments, a semiconductor arrangement includes a collector region having a first surface coplanar with a first surface of a semiconductor layer, a drift region over a portion of the collector region and having a first surface coplanar with the first surface of the semiconductor layer, and a body region over the drift region. A body contact is in the body region. An emitter contact contacts the body contact and the body region. A collector contact contacts the first surface of the collector region. A first gate structure is adjacent the first surface of the drift region, the body region, and the body contact.
Claims20
A semiconductor arrangement, comprising:
- a collector region comprising a bottom portion and a sidewall portion extending from the bottom portion to a first surface of a semiconductor layer;
- a drift region over the collector region;
- a buffer layer between the collector region and the drift region and having an uppermost surface co-planar with the first surface of the semiconductor layer;
- a body region over the drift region;
- a first body contact and a second body contact in the body region;
- an emitter contact contacting the first body contact, the second body contact, and the body region;
- a collector contact contacting a first surface of the sidewall portion of the collector region coplanar with the first surface of the semiconductor layer, wherein the collector contact is spaced apart from drift region;
- a first gate structure directly contacting the drift region, the body region, and the first body contact, wherein in a first direction parallel to the first surface of the semiconductor layer, a length of the emitter contact is less than a length of the first gate structure;
- and
- a second gate structure separated from the first gate structure and directly contacting the drift region, the body region, and the second body contact, wherein the first direction is perpendicular to a direction extending from the first gate structure to the second gate structure.
7 more elements
A semiconductor arrangement, comprising:
- a collector region having a first surface coplanar with an uppermost surface of a semiconductor layer;
- a drift region over a portion of the collector region and having a first surface coplanar with the uppermost surface of the semiconductor layer;
- a buffer layer between the collector region and the drift region and separating a sidewall of the drift region facing the collector region from a sidewall of the collector region facing the drift region;
- a body region over the drift region and having an uppermost surface coplanar with the uppermost surface of the semiconductor layer;
- a first body contact in the body region;
- a second body contact in the body region and separated from the first body contact by a portion of the body region extending continuously between the first body contact and the second body contact;
- an emitter contact directly contacting the first body contact, the second body contact, and the portion of the body region;
- a first collector contact contacting the first surface of the collector region;
- a first gate structure adjacent the first surface of the drift region, the body region, and the first body contact wherein in a first direction parallel to the uppermost surface of the semiconductor layer, a length of the emitter contact is less than a length of the first gate structure;
- and
- a second gate structure overlying the drift region, the body region, and the second body contact, wherein the first direction is perpendicular to a direction extending from the first gate structure to the second gate structure.
8 more elements
A semiconductor arrangement, comprising:
- a collector region;
- a drift region over the collector region, wherein the drift region is laterally between a first sidewall of the collector region and a second sidewall of the collector region;
- a buffer layer between the collector region and the drift region and separating a sidewall of the drift region facing the collector region from a sidewall of the collector region facing the drift region;
- a body region over the drift region;
- a first body contact in the body region;
- a second body contact in the body region and separated from the first body contact by a portion of the body region extending continuously between the first body contact and the second body contact;
- an emitter contact contacting the first body contact, the second body contact, and the portion of the body region;
- a first gate structure overlying the drift region, the body region, and the first body contact, wherein in a first direction parallel to an uppermost surface of the collector region, a length of the emitter contact is less than a length of the first gate structure;
- and
- a second gate structure overlying the drift region, the body region, and the second body contact, wherein the first direction is perpendicular to a direction extending from the first gate structure to the second gate structure.
7 more elements
Dependencies are inferred from the claim text.