Semiconductor arrangement and method of manufacture
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorHung-Te LIN
Life of this patent
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Abstract
A semiconductor arrangement and method of manufacture is provided. In some embodiments, a semiconductor arrangement includes a collector region having a first surface coplanar with a first surface of a semiconductor layer, a drift region over a portion of the collector region and having a first surface coplanar with the first surface of the semiconductor layer, and a body region over the drift region. A body contact is in the body region. An emitter contact contacts the body contact and the body region. A collector contact contacts the first surface of the collector region. A first gate structure is adjacent the first surface of the drift region, the body region, and the body contact.
Claims20
A method of forming a semiconductor arrangement, comprising:
- forming a first recess in a semiconductor layer;
- forming a collector region in the first recess;
- forming a drift region in the first recess over the collector region;
- forming a body region in the first recess over the drift region;
- forming a first body contact in the body region;
- forming an emitter contact contacting the first body contact and the body region;
- forming a collector contact contacting the collector region;
- and
- forming a first gate structure adjacent the drift region, the body region, and the first body contact.
A method of forming a semiconductor arrangement, comprising:
- forming a first recess in an inner perimeter of a closed-loop deep trench isolation structure;
- forming a drift region in the first recess;
- implanting a first impurity into the drift region to define a body region;
- and
- implanting a second impurity into the body region to define a first body contact.
A method of forming a semiconductor arrangement, comprising:
- forming a body region;
- forming a first body contact and a second body contact in the body region, the first body contact separated from the second body contact;
- forming an emitter contact over the first body contact, the second body contact, and a portion of the body region between the first body contact and the second body contact;
- and
- forming a first gate structure over the body region, wherein in a first direction parallel to an upper surface of the body region, a length of the emitter contact is less than a length of the first gate structure.
Dependencies are inferred from the claim text.