H10D 12/461
Having non-planar surfaces
Official title: {having non-planar surfaces, e.g. having trenches, recesses or pillars in the surfaces of the emitter, base or collector regions}
H10D12/461 (Having non-planar surfaces) appears on 3,545 US grants and 4,408 published applications in this corpus.
Search patents in H10D- Granted patents
- 3,545
- Published applications
- 4,408
- Assignees
- 324
- Inventors
- 2,906
- Latest grant
- 6 Oct 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1980 | 1 | 0 |
| 1981 | 0 | 0 |
| 1982 | 1 | 0 |
| 1983 | 0 | 0 |
| 1984 | 0 | 0 |
| 1985 | 0 | 0 |
| 1986 | 1 | 0 |
| 1987 | 1 | 0 |
| 1988 | 1 | 0 |
| 1989 | 2 | 0 |
| 1990 | 4 | 0 |
| 1991 | 5 | 0 |
| 1992 | 11 | 0 |
| 1993 | 6 | 0 |
| 1994 | 11 | 0 |
| 1995 | 6 | 0 |
| 1996 | 15 | 0 |
| 1997 | 12 | 0 |
| 1998 | 25 | 0 |
| 1999 | 20 | 0 |
| 2000 | 25 | 0 |
| 2001 | 32 | 16 |
| 2002 | 26 | 36 |
| 2003 | 38 | 39 |
| 2004 | 45 | 35 |
| 2005 | 37 | 49 |
| 2006 | 24 | 38 |
| 2007 | 29 | 67 |
| 2008 | 29 | 65 |
| 2009 | 38 | 61 |
| 2010 | 57 | 91 |
| 2011 | 81 | 94 |
| 2012 | 84 | 125 |
| 2013 | 97 | 129 |
| 2014 | 117 | 196 |
| 2015 | 183 | 282 |
| 2016 | 233 | 336 |
| 2017 | 300 | 312 |
| 2018 | 260 | 308 |
| 2019 | 278 | 300 |
| 2020 | 260 | 264 |
| 2021 | 227 | 242 |
| 2022 | 207 | 281 |
| 2023 | 172 | 277 |
| 2024 | 155 | 280 |
| 2025 | 212 | 269 |
| 2026 | 177 | 216 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Subgroups
Granted patents
Recent patents
- Semiconductor device and manufacturing method6 Oct 2026US 12,757,452 B2Hitachi Energy Ltd
- Semiconductor device6 Oct 2026US 12,757,479 B2Fuji Electric Co., Ltd.
- Insulating-gate bipolar transistors including a reverse conducting diode29 Sep 2026US 12,751,025 B2GLOBALFOUNDRIES U. S. Inc.
- Semiconductor device, semiconductor device control method, and semiconductor device manufacturing method to increase allowable range of transition time difference between two signals29 Sep 2026US 12,751,026 B2Mitsubishi Electric Corporation
- Cell structures of insulated gate bipolar transistor IGBT with a control gate and a carrier storage layer, and their manufacturing methods29 Sep 2026US 12,751,055 B2Nexperia B. V.
- Semiconductor device8 Oct 2026US 2026/0312580 A1Fuji Electric Co., Ltd.
- Semiconductor device8 Oct 2026US 2026/0313992 A1Fuji Electric Co., Ltd.
- Double gate transistor device and method of operating1 Oct 2026US 2026/0303088 A1Infineon Technologies Austria AG
- Igbt device and cell structure thereof, and manufacturing method for cell structure1 Oct 2026US 2026/0304869 A1Gree Electric Appliances, Inc. of Zhuhai
- Semiconductor device1 Oct 2026US 2026/0304888 A1Fuji Electric Co., Ltd.
Most cited
By later US patents
- Integrated circuit including inverted dielectric isolation331US 6,084,284 A2000
- Field effect-controlled semiconductor component273US 6,184,555 B2Siemens Aktiengesellschaft · 2001
- High performance high voltage vertical transistor and method of fabrication221US 5,326,711 ATexas Instruments Incorporated · 1994
- Grooved DMOS process with varying gate dielectric thickness209US 4,914,058 ASiliconix Incorporated · 1990
- Semiconductor device having a plurality of parallel drift regions189US 6,097,063 AFuji Electric Co., Ltd. · 2000