H10D 12/481
Having gate structures on slanted surfaces, on vertical surfaces, or in grooves
Official title: {having gate structures on slanted surfaces, on vertical surfaces, or in grooves, e.g. trench gate IGBTs}
H10D12/481 (Having gate structures on slanted surfaces, on vertical surfaces, or in grooves) appears on 3,376 US grants and 4,273 published applications in this corpus.
Search patents in H10D- Granted patents
- 3,376
- Published applications
- 4,273
- Assignees
- 303
- Inventors
- 2,789
- Latest grant
- 6 Oct 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1980 | 1 | 0 |
| 1981 | 0 | 0 |
| 1982 | 1 | 0 |
| 1983 | 0 | 0 |
| 1984 | 0 | 0 |
| 1985 | 0 | 0 |
| 1986 | 1 | 0 |
| 1987 | 1 | 0 |
| 1988 | 1 | 0 |
| 1989 | 1 | 0 |
| 1990 | 1 | 0 |
| 1991 | 3 | 0 |
| 1992 | 3 | 0 |
| 1993 | 1 | 0 |
| 1994 | 7 | 0 |
| 1995 | 5 | 0 |
| 1996 | 13 | 0 |
| 1997 | 10 | 0 |
| 1998 | 17 | 0 |
| 1999 | 14 | 0 |
| 2000 | 20 | 0 |
| 2001 | 28 | 16 |
| 2002 | 26 | 35 |
| 2003 | 35 | 38 |
| 2004 | 44 | 34 |
| 2005 | 36 | 49 |
| 2006 | 24 | 34 |
| 2007 | 27 | 63 |
| 2008 | 26 | 57 |
| 2009 | 35 | 54 |
| 2010 | 53 | 90 |
| 2011 | 76 | 85 |
| 2012 | 77 | 122 |
| 2013 | 94 | 123 |
| 2014 | 112 | 188 |
| 2015 | 175 | 270 |
| 2016 | 223 | 323 |
| 2017 | 285 | 293 |
| 2018 | 242 | 295 |
| 2019 | 267 | 293 |
| 2020 | 256 | 259 |
| 2021 | 220 | 238 |
| 2022 | 205 | 278 |
| 2023 | 170 | 274 |
| 2024 | 154 | 280 |
| 2025 | 209 | 269 |
| 2026 | 177 | 213 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
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- Cell structures of insulated gate bipolar transistor IGBT with a control gate and a carrier storage layer, and their manufacturing methods29 Sep 2026US 12,751,055 B2Nexperia B. V.
- Semiconductor device8 Oct 2026US 2026/0312580 A1Fuji Electric Co., Ltd.
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- Double gate transistor device and method of operating1 Oct 2026US 2026/0303088 A1Infineon Technologies Austria AG
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Most cited
By later US patents
- High performance high voltage vertical transistor and method of fabrication221US 5,326,711 ATexas Instruments Incorporated · 1994
- Grooved DMOS process with varying gate dielectric thickness209US 4,914,058 ASiliconix Incorporated · 1990
- Semiconductor device having a plurality of parallel drift regions189US 6,097,063 AFuji Electric Co., Ltd. · 2000
- Power metal-oxide-semiconductor field effect transistor172US 5,168,331 ASiliconix Incorporated · 1992
- Self-aligned power MOSFET device with recessed gate and source168US 5,801,417 AAdvanced Power Technology, Inc. · 1998