Method of forming a recessed terminal and electronic device including the recessed terminal
AssigneeSTMicroelectronics International N.V.
InventorsSimone Dario MARIANI, Davide FAGIANI, Magali GREGOIRE, Marco MARCHESI, Adrien ESTELLON, Marina RICHET
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Abstract
An electronic device comprises a solid body of semiconductor material including silicon, including a source region and a body region; a trench in the solid body, having a lateral wall along the source region and a bottom wall along the body region; a first silicide region in direct contact with the source region; and a second silicide region in direct contact with the body region. A first thickness of the first silicide region is different than a second thickness of the second silicide region.
Claims20
A method of forming an electrical contact of an electronic device comprises:
- forming a solid body of semiconductor material including silicon, the solid body including a first region having a first electrical conductivity and a second region having a second electrical conductivity opposite to the first electrical conductivity and extending on the first region;
- forming a trench in the solid body, completely through the second region and reaching the first region, the trench having a lateral wall exposing the second region and a bottom wall exposing the first region;
- forming a first metal layer on the lateral wall of the trench and in direct contact with the second region, the first metal layer including a first surface directly on the bottom wall;
- forming a gap in the first metal layer exposing a first portion of the bottom wall;
- forming a second metal layer at the first portion of the bottom wall, in contact with the first region, the second metal layer having a first surface directly on the bottom wall of the trench coplanar with the first surface of the first metal layer;
- and
- forming, through one or more thermal treatments, a first silicide region at the interface between the second region and the first metal layer and a second silicide region at the interface between the first region and the second metal layer.
An electronic device comprising:
- a solid body of semiconductor material including silicon, the solid body including a first region having a first electrical conductivity, and a second region having a second electrical conductivity opposite to the first electrical conductivity and extending on the first region;
- a trench in the solid body, extending along a first direction completely through the second region and reaching the first region, the trench having a lateral wall along the second region and a bottom wall along the first region;
- a buried region in the first region and aligned with the bottom wall along the first direction;
- a first metal layer in the trench;
- a second metal layer in the trench, the first and second metal layers both being in contact with the buried region;
- a first silicide region extending between the second region and the lateral wall, and in direct contact with the second region;
- and
- a second silicide region extending between the first region and the bottom wall, and in direct contact with the first region,
- wherein a first thickness of the first silicide region is different from a second thickness of the second silicide region.
A device, comprising:
- a substrate;
- a first region on the substrate;
- a second region on the first region;
- a trench extending along a first direction entirely through the first and second regions, the trench including a plurality of sidewalls and an end surface;
- a buried region aligned with the end surface along the first direction;
- a first silicide region extending between the second region and the lateral wall, and in direct contact with the second region;
- and
- a second silicide region extending between the first region and the bottom wall, and in direct contact with the first region, the second silicide region being in the buried region.
Dependencies are inferred from the claim text.