H10D 12/416
Bidirectional devices
Official title: {Bidirectional devices, e.g. trench-gate IGBTs having additional gates at the anode side}
H10D12/416 (Bidirectional devices) appears on 10 US grants and 19 published applications in this corpus.
Search patents in H10D- Granted patents
- 10
- Published applications
- 19
- Assignees
- 13
- Inventors
- 49
- Latest grant
- 29 Sep 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1996 | 1 | 0 |
| 1997 | 0 | 0 |
| 1998 | 2 | 0 |
| 1999 | 1 | 0 |
| 2000 | 0 | 0 |
| 2001 | 0 | 0 |
| 2002 | 0 | 0 |
| 2003 | 0 | 0 |
| 2004 | 1 | 0 |
| 2005 | 0 | 0 |
| 2006 | 0 | 0 |
| 2007 | 0 | 0 |
| 2008 | 0 | 1 |
| 2009 | 1 | 0 |
| 2010 | 0 | 0 |
| 2011 | 0 | 0 |
| 2012 | 0 | 0 |
| 2013 | 0 | 0 |
| 2014 | 0 | 0 |
| 2015 | 0 | 0 |
| 2016 | 1 | 1 |
| 2017 | 0 | 0 |
| 2018 | 0 | 1 |
| 2019 | 1 | 0 |
| 2020 | 1 | 1 |
| 2021 | 0 | 0 |
| 2022 | 0 | 0 |
| 2023 | 0 | 0 |
| 2024 | 0 | 0 |
| 2025 | 0 | 6 |
| 2026 | 1 | 9 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- Insulating-gate bipolar transistors including a reverse conducting diode29 Sep 2026US 12,751,025 B2GLOBALFOUNDRIES U. S. Inc.
- Semiconductor device21 Jul 2020US 10,720,918 B2Mitsubishi Electric Corporation
- Method for processing a semiconductor workpiece and semiconductor device3 Sep 2019US 10,403,725 B2Infineon Technologies AG
- Semiconductor device12 Jul 2016US 9,391,070 B2Kabushiki Kaisha Toshiba
- Bipolar high voltage/power semiconductor device having first and second insulated gated and method of operation20 Oct 2009US 7,605,446 B2Cambridge Semiconductor Limited
- Semiconductor device and method for manufacturing semiconductor device17 Sep 2026US 2026/0282407 A1Mitsubishi Electric Corporation
- Semiconductor device10 Sep 2026US 2026/0271315 A1Kabushiki Kaisha Toshiba
- Semiconductor device4 Jun 2026US 2026/0156899 A1Denso Corporation
- Semiconductor device14 May 2026US 2026/0136573 A1Kabushiki Kaisha Toshiba
- Semiconductor device7 May 2026US 2026/0129889 A1Mitsubishi Electric Corporation
Most cited
By later US patents
- Bidirectional lateral insulated gate bipolar transistor having increased voltage blocking capability45US 5,977,569 AAllen-Bradley Company, Inc. · 1999
- Power application circuits utilizing bidirectional insulated gate bipolar transistor42US 5,852,559 AAllen-Bradley Company, Inc. · 1998
- Bidirectional lateral insulated gate bipolar transistor24US 5,793,064 AAllen-Bradley Company, Inc. · 1998
- Semiconductor bidirectional switch and method of driving the same11US 5,585,650 AFuji Electric Co., Ltd. · 1996
- Bipolar high voltage/power semiconductor device having first and second insulated gated and method of operation4US 7,605,446 B2Cambridge Semiconductor Limited · 2009