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US 2026/0129889 A1Published application
Semiconductor device
AssigneeMitsubishi Electric Corporation
InventorsMasaki SUDO, Masanori TSUKUDA, Takuya YOSHIDA, Shunsuke SAKAMOTO, Yosuke NAKANISHI
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Abstract
A semiconductor device includes a collector electrode, a collector-side element trench structure, a collector-side gate pad, and a collector-side terminal trench structure. A side surface of the semiconductor substrate and the collector electrode surround the collector-side gate pad in a planar view, and the collector-side terminal trench structure penetrates the collector layer on the side surface side of the semiconductor substrate with respect to the connecting portion between the collector electrode and the collector layer in a cross-sectional view.
Claims20
A semiconductor device comprising:
- a semiconductor substrate having a front surface and a back surface on which an element region and a termination region surrounding the element region are defined;
- an emitter electrode disposed on the front surface side of the semiconductor substrate;
- an emitter-side element trench structure that is disposed on the front surface side of the semiconductor substrate in the element region, and includes an emitter-side gate electrode insulated from the emitter electrode;
- an emitter-side gate pad that is disposed on the front surface side of the semiconductor substrate in the termination region, is insulated from the emitter electrode, and is electrically connected to the emitter-side gate electrode;
- a collector electrode disposed on the back surface side of the semiconductor substrate;
- a collector-side element trench structure that is disposed on the back surface side of the semiconductor substrate in the element region, and includes a collector-side gate electrode insulated from the collector electrode;
- a collector-side gate pad that is disposed on the back surface side of the semiconductor substrate in the termination region, is insulated from the collector electrode, and is electrically connected to the collector-side gate electrode;
- and
- a collector-side terminal trench structure that is disposed on the back surface side of the semiconductor substrate in the termination region, and includes a collector-side terminal electrode, wherein
- the semiconductor substrate includes:
- a drift layer of a first conductivity type;
- a buffer layer of the first conductivity type that is disposed on the back surface side of the drift layer;
- and
- a collector layer of a second conductivity type that is disposed on the back surface side of the buffer layer,
- in a planar view, a side surface of the semiconductor substrate and the collector electrode surround the collector-side gate pad, and,
- in a cross-sectional view, the collector-side terminal trench structure penetrates the collector layer on the side surface side of the semiconductor substrate with respect to a connecting portion between the collector electrode and the collector layer.
13 more elements
A semiconductor device comprising:
- a semiconductor substrate having a front surface and a back surface on which an element region and a termination region surrounding the element region are defined;
- an emitter electrode disposed on the front surface side of the semiconductor substrate;
- an emitter-side element trench structure that is disposed on the front surface side of the semiconductor substrate in the element region, and includes an emitter-side gate electrode insulated from the emitter electrode;
- an emitter-side gate pad that is disposed on the front surface side of the semiconductor substrate in the termination region, is insulated from the emitter electrode, and is electrically connected to the emitter-side gate electrode;
- a collector electrode disposed on the back surface side of the semiconductor substrate;
- a collector-side element trench structure that is disposed on the back surface side of the semiconductor substrate in the element region, and includes a collector-side gate electrode insulated from the collector electrode;
- and
- a collector-side gate pad that is disposed on the back surface side of the semiconductor substrate in the termination region, is insulated from the collector electrode, and is electrically connected to the collector-side gate electrode, wherein
- the semiconductor substrate includes:
- a drift layer of a first conductivity type;
- a buffer layer of the first conductivity type that is disposed on the back surface side of the drift layer;
- and
- a collector layer of a second conductivity type that is disposed on the back surface side of the buffer layer,
- in a planar view, a side surface of the semiconductor substrate and the collector electrode surround the collector-side gate pad, and,
- in a cross-sectional view, the buffer layer penetrates the collector layer on the side surface side of the semiconductor substrate with respect to a connecting portion between the collector electrode and the collector layer.
12 more elements
A semiconductor device comprising:
- a semiconductor substrate having a front surface and a back surface on which an element region and a termination region surrounding the element region are defined;
- an emitter electrode disposed on the front surface side of the semiconductor substrate;
- an emitter-side element trench structure that is disposed on the front surface side of the semiconductor substrate in the element region, and includes an emitter-side gate electrode insulated from the emitter electrode;
- an emitter-side gate pad that is disposed on the front surface side of the semiconductor substrate in the termination region, is insulated from the emitter electrode, and is electrically connected to the emitter-side gate electrode;
- a collector electrode disposed on the back surface side of the semiconductor substrate;
- a collector-side element trench structure that is disposed on the back surface side of the semiconductor substrate in the element region, and includes a collector-side gate electrode insulated from the collector electrode;
- and
- a collector-side gate pad that is disposed on the back surface side of the semiconductor substrate in the termination region, is insulated from the collector electrode, and is electrically connected to the collector-side gate electrode, wherein
- the semiconductor substrate includes:
- a drift layer of a first conductivity type;
- a buffer layer of the first conductivity type that is disposed on the back surface side of the drift layer;
- and
- a collector layer of a second conductivity type that is disposed on the back surface side of the buffer layer, and
- the semiconductor device further comprises a modified layer that is disposed in a portion of a surface of at least one of the collector-side gate pad or the collector electrode in a cross-sectional view, and has lower solder wettability than solder wettability of a remaining portion of the surface.
11 more elements
A semiconductor device comprising:
- a semiconductor substrate having a front surface and a back surface on which an element region and a termination region surrounding the element region are defined;
- an emitter electrode disposed on the front surface side of the semiconductor substrate;
- an emitter-side element trench structure that is disposed on the front surface side of the semiconductor substrate in the element region, and includes an emitter-side gate electrode insulated from the emitter electrode;
- and
- an emitter-side gate pad that is disposed on the front surface side of the semiconductor substrate in the termination region, is insulated from the emitter electrode, and is electrically connected to the emitter-side gate electrode, wherein
- the semiconductor device further comprises a modified layer that is disposed in a portion of a surface of at least one of the emitter-side gate pad or the emitter electrode in a cross-sectional view, and has lower solder wettability than solder wettability of a remaining portion of the surface.
3 more elements
Dependencies are inferred from the claim text.