Semiconductor device

A semiconductor device, comprising:

• a first electrode;
• a second electrode;
• a third electrode;
• a fourth electrode;
• a semiconductor member;
• a first insulating member;
• and
• a second insulating member,
• at least a part of the semiconductor member being between the first electrode and the second electrode in a first direction from the first electrode to the second electrode,
• the semiconductor member including:
• a first semiconductor region of a first conductivity type,
• a second semiconductor region of a second conductivity type,
• a third semiconductor region of the first conductivity type,
• a fourth semiconductor region of the first conductivity type,
• a fifth semiconductor region of the second conductivity type, and
• a sixth semiconductor region of the first conductivity type,
• the second electrode being electrically connected to the third semiconductor region,
• at least a part of the second semiconductor region being between the first semiconductor region and the third semiconductor region,
• at least a part of the first insulating member being between the third electrode and the first semiconductor region, between the third electrode and the second semiconductor region, and between the third electrode and the third semiconductor region,
• the fifth semiconductor region including a first partial region, a second partial region, a third partial region, and a fourth partial region,
• the fourth semiconductor region being between the second partial region and the fourth partial region in a second direction crossing the first direction,
• the sixth semiconductor region including a first semiconductor portion,
• the first semiconductor portion being between the third partial region and the fourth semiconductor region in the second direction,
• the second partial region being between the first semiconductor portion and the fourth semiconductor region,
• a part of the first semiconductor portion being between the first electrode and the first partial region in the first direction,
• the fourth partial region being between the first electrode and the first semiconductor region in the first direction,
• at least a part of the second insulating member being between the fourth electrode and the first semiconductor portion, between the fourth electrode and the second partial region, and between the fourth electrode and the fourth semiconductor region,
• the first electrode being electrically connected to the fifth semiconductor region, and
• a fourth impurity concentration of the first conductivity type in at least a part of the fourth semiconductor region being higher than a first impurity concentration of the first conductivity type in the first semiconductor region.