Semiconductor device

A semiconductor device, comprising:

• a first electrode including a first electrode portion and a second electrode portion;
• a second electrode;
• a plurality of third electrodes;
• a fourth electrode;
• a semiconductor member including a first semiconductor portion and a second semiconductor portion;
• a first insulating member;
• and
• a second insulating member,
• the first semiconductor portion being between the first electrode portion and the second electrode in a first direction from the first electrode to the second electrode,
• the second semiconductor portion being between the second electrode portion and the second electrode in the first direction,
• a direction from the first electrode portion to the second electrode portion crossing the first direction,
• each of the first semiconductor portion and the second semiconductor portion including
• a first semiconductor region of a first conductivity type,
• a second semiconductor region of a second conductivity type, and
• a third semiconductor region of the first conductivity type,
• the second electrode being electrically connected to the third semiconductor region,
• the second semiconductor region being between the first semiconductor region and the third semiconductor region,
• at least a part of the first insulating member being between the plurality of third electrodes and the semiconductor member,
• the first semiconductor portion including
• a fourth semiconductor region of the second conductivity type, and
• a fifth semiconductor region of the first conductivity type,
• the fourth electrode being between the first electrode portion and the first semiconductor portion,
• the fifth semiconductor region being electrically connected to the first electrode portion,
• the fourth semiconductor region being between the fifth semiconductor region and the first semiconductor region included in the first semiconductor portion,
• the second insulating member being between the fourth electrode and the first semiconductor portion,
• the second semiconductor portion including
• a sixth semiconductor region of the second conductivity type, and
• a seventh semiconductor region of the first conductivity type,
• the sixth semiconductor region and the seventh semiconductor region being between the second electrode portion and the first semiconductor region included in the second semiconductor portion.