H10D 10/051
Of vertical bjts
Official title: {of vertical BJTs (of heterojunction BJTs H10D10/021; of Schottky BJTs H10D10/031; of thin film BJTs H10D10/041)}
H10D10/051 (Of vertical bjts) appears on 1,662 US grants and 1,083 published applications in this corpus.
Search patents in H10D- Granted patents
- 1,662
- Published applications
- 1,083
- Assignees
- 362
- Inventors
- 2,000
- Latest grant
- 15 Sep 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 2 | 0 |
| 1977 | 1 | 0 |
| 1978 | 6 | 0 |
| 1979 | 2 | 0 |
| 1980 | 4 | 0 |
| 1981 | 3 | 0 |
| 1982 | 8 | 0 |
| 1983 | 8 | 0 |
| 1984 | 10 | 0 |
| 1985 | 8 | 0 |
| 1986 | 6 | 0 |
| 1987 | 19 | 0 |
| 1988 | 18 | 0 |
| 1989 | 30 | 0 |
| 1990 | 31 | 0 |
| 1991 | 43 | 0 |
| 1992 | 50 | 0 |
| 1993 | 56 | 0 |
| 1994 | 53 | 0 |
| 1995 | 47 | 0 |
| 1996 | 54 | 0 |
| 1997 | 42 | 0 |
| 1998 | 34 | 0 |
| 1999 | 49 | 0 |
| 2000 | 46 | 0 |
| 2001 | 45 | 19 |
| 2002 | 46 | 49 |
| 2003 | 47 | 40 |
| 2004 | 56 | 53 |
| 2005 | 41 | 56 |
| 2006 | 38 | 38 |
| 2007 | 36 | 48 |
| 2008 | 30 | 46 |
| 2009 | 39 | 22 |
| 2010 | 37 | 30 |
| 2011 | 40 | 42 |
| 2012 | 23 | 39 |
| 2013 | 46 | 51 |
| 2014 | 48 | 45 |
| 2015 | 55 | 53 |
| 2016 | 47 | 61 |
| 2017 | 61 | 49 |
| 2018 | 43 | 40 |
| 2019 | 50 | 39 |
| 2020 | 34 | 33 |
| 2021 | 40 | 58 |
| 2022 | 35 | 41 |
| 2023 | 40 | 37 |
| 2024 | 32 | 37 |
| 2025 | 16 | 28 |
| 2026 | 7 | 29 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Subgroups
Granted patents
Recent patents
- Bipolar transistor structures with cavity below extrinsic base and methods to form same15 Sep 2026US 12,740,113 B2GLOBALFOUNDRIES U. S. Inc.
- Methods to process 3D semiconductor devices and structures which have metal layers16 Jun 2026US 12,660,326 B2Monolithic 3D Inc.
- Semiconductor device26 May 2026US 12,641,807 B2Samsung Electronics Co., Ltd.
- Methods for making bipolar junction transistors including emitter-base and base-collector superlattices19 May 2026US 12,635,155 B2Atomera Incorporated
- Semiconductor device5 May 2026US 12,622,006 B2Samsung Electronics Co., Ltd.
- Crystalline defect reduction in doped region8 Oct 2026US 2026/0313926 A1Texas Instruments Incorporated
- Crystalline defect reduction in doped region8 Oct 2026US 2026/0314281 A1Texas Instruments Incorporated
- Bipolar junction transistor co-integrated with nanosheet transistor1 Oct 2026US 2026/0304807 A1International Business Machines Corporation
- Structure with spacer adjacent collector and related methods24 Sep 2026US 2026/0293231 A1GLOBALFOUNDRIES U. S. Inc.
- Bipolar Junction Transistors Including Embedded Base Superlattice And Related Methods13 Aug 2026US 2026/0239639 A1Atomera Incorporated
Most cited
By later US patents
- Method of manufacturing a semiconductor device533US 5,098,638 AMatsushita Electric Industrial Co., Ltd. · 1992
- Method of forming transistors with poly-sidewall contacts utilizing deposition of polycrystalline and insulating layers combined with selective etching and oxidation of said layers135US 4,663,831 AMotorola, Inc. · 1987
- BICDMOS structures126US 5,426,328 ASiliconix Incorporated · 1995
- Method of manufacturing semiconductor device124US 5,227,329 AHitachi, Ltd. · 1993
- Modular bipolar-CMOS-DMOS analog integrated circuit & power transistor technology114US 6,855,985 B2Advanced Analogic Technologies (Hong Kong) Limited · 2005