H10D 10/056
Of vertical bjts having the main current going through the whole substrate
Official title: {of vertical BJTs having the main current going through the whole substrate, e.g. power BJTs}
H10D10/056 (Of vertical bjts having the main current going through the whole substrate) appears on 123 US grants and 86 published applications in this corpus.
Search patents in H10D- Granted patents
- 123
- Published applications
- 86
- Assignees
- 70
- Inventors
- 229
- Latest grant
- 5 May 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 1 | 0 |
| 1977 | 0 | 0 |
| 1978 | 0 | 0 |
| 1979 | 0 | 0 |
| 1980 | 0 | 0 |
| 1981 | 1 | 0 |
| 1982 | 0 | 0 |
| 1983 | 0 | 0 |
| 1984 | 1 | 0 |
| 1985 | 1 | 0 |
| 1986 | 4 | 0 |
| 1987 | 2 | 0 |
| 1988 | 2 | 0 |
| 1989 | 1 | 0 |
| 1990 | 1 | 0 |
| 1991 | 1 | 0 |
| 1992 | 4 | 0 |
| 1993 | 2 | 0 |
| 1994 | 6 | 0 |
| 1995 | 6 | 0 |
| 1996 | 4 | 0 |
| 1997 | 5 | 0 |
| 1998 | 1 | 0 |
| 1999 | 5 | 0 |
| 2000 | 7 | 0 |
| 2001 | 5 | 2 |
| 2002 | 3 | 3 |
| 2003 | 1 | 2 |
| 2004 | 1 | 1 |
| 2005 | 0 | 0 |
| 2006 | 1 | 0 |
| 2007 | 0 | 1 |
| 2008 | 0 | 2 |
| 2009 | 0 | 2 |
| 2010 | 2 | 3 |
| 2011 | 1 | 1 |
| 2012 | 2 | 3 |
| 2013 | 2 | 4 |
| 2014 | 5 | 3 |
| 2015 | 3 | 4 |
| 2016 | 5 | 8 |
| 2017 | 9 | 10 |
| 2018 | 4 | 9 |
| 2019 | 11 | 2 |
| 2020 | 3 | 5 |
| 2021 | 2 | 2 |
| 2022 | 1 | 2 |
| 2023 | 3 | 3 |
| 2024 | 3 | 4 |
| 2025 | 0 | 6 |
| 2026 | 1 | 4 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Subgroups
Granted patents
Recent patents
- Semiconductor device5 May 2026US 12,622,006 B2Samsung Electronics Co., Ltd.
- System and method for bi-directional trench power switches19 Nov 2024US 12,148,819 B2Ideal Power Inc.
- Ruggedized symmetrically bidirectional bipolar power transistor7 May 2024US 11,978,788 B2Ideal Power Inc.
- Semiconductor device with bi-directional double-base trench power switches23 Jan 2024US 11,881,525 B2Ideal Power Inc.
- Isolation in a semiconductor device15 Aug 2023US 11,728,424 B2Semiconductor Components Industries, LLC
- Methods and systems of operating a pnp bi-directional double-base bipolar junction transistor18 Jun 2026US 2026/0173419 A1Ideal Power Inc.
- Double well bipolar junction transistor for esd and surge protection18 Jun 2026US 2026/0173538 A1Semiconductor Components Industries, LLC
- Semiconductor device11 Jun 2026US 2026/0164687 A1Samsung Electronics Co., Ltd.
- Bipolar junction transistor with finfet structure5 Mar 2026US 2026/0068200 A1
- Low Saturation Voltage BJT with Enhanced Packing Flexibility25 Dec 2025US 2025/0393281 A1
Most cited
By later US patents
- Circuit configuration and manufacturing processes for vertical transient voltage suppressor (TVS) and EMI filter47US 7,781,826 B2Alpha and Omega Semiconductor Incorporated · 2010
- Bipolar transistor structure using ballast resistor33US 5,374,844 AMicrel, Inc. · 1994
- Inverted epitaxial process semiconductor devices33US 5,416,354 AUnitrode Corporation · 1995
- Bidirectional bipolar-mode JFET driver circuitry32US 10,374,070 B22019
- Method for the manufacture of bipolar transistor structures with self-adjusting emitter and base regions for extreme high frequency circuits31US 4,581,319 ASiemens Aktiengesellschaft · 1986