H10D 10/01
Manufacture or treatment
H10D10/01 (Manufacture or treatment) appears on 3,528 US grants and 2,659 published applications in this corpus.
Search patents in H10D- Granted patents
- 3,528
- Published applications
- 2,659
- Assignees
- 625
- Inventors
- 3,934
- Latest grant
- 6 Oct 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 2 | 0 |
| 1977 | 1 | 0 |
| 1978 | 8 | 0 |
| 1979 | 2 | 0 |
| 1980 | 4 | 0 |
| 1981 | 3 | 0 |
| 1982 | 8 | 0 |
| 1983 | 8 | 0 |
| 1984 | 12 | 0 |
| 1985 | 12 | 0 |
| 1986 | 11 | 0 |
| 1987 | 21 | 0 |
| 1988 | 25 | 0 |
| 1989 | 37 | 0 |
| 1990 | 49 | 0 |
| 1991 | 67 | 0 |
| 1992 | 79 | 0 |
| 1993 | 86 | 0 |
| 1994 | 94 | 0 |
| 1995 | 92 | 0 |
| 1996 | 87 | 0 |
| 1997 | 78 | 0 |
| 1998 | 68 | 0 |
| 1999 | 72 | 0 |
| 2000 | 66 | 0 |
| 2001 | 78 | 37 |
| 2002 | 106 | 129 |
| 2003 | 127 | 132 |
| 2004 | 161 | 147 |
| 2005 | 127 | 156 |
| 2006 | 98 | 107 |
| 2007 | 100 | 116 |
| 2008 | 75 | 113 |
| 2009 | 84 | 47 |
| 2010 | 93 | 71 |
| 2011 | 77 | 76 |
| 2012 | 56 | 79 |
| 2013 | 92 | 114 |
| 2014 | 114 | 113 |
| 2015 | 124 | 129 |
| 2016 | 117 | 115 |
| 2017 | 133 | 100 |
| 2018 | 111 | 94 |
| 2019 | 111 | 108 |
| 2020 | 95 | 91 |
| 2021 | 97 | 122 |
| 2022 | 81 | 86 |
| 2023 | 101 | 128 |
| 2024 | 95 | 92 |
| 2025 | 49 | 93 |
| 2026 | 34 | 64 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Subgroups
Granted patents
Recent patents
- GaN power device and manufacturing method thereof6 Oct 2026US 12,757,448 B2Peking University
- Lateral bipolar junction transistor device and method of forming same29 Sep 2026US 12,747,993 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Semiconductor device with enhanced avalanche ruggedness29 Sep 2026US 12,751,053 B2Taiwan Semiconductor Manufacturing Company.Ltd
- High voltage breakdown resistant bipolar transistor29 Sep 2026US 12,751,054 B2Newport Fab, LLC
- Bipolar transistor structures with cavity below extrinsic base and methods to form same15 Sep 2026US 12,740,113 B2GLOBALFOUNDRIES U. S. Inc.
- Crystalline defect reduction in doped region8 Oct 2026US 2026/0313926 A1Texas Instruments Incorporated
- Electrostatic discharge circuitry for a high-voltage semiconductor device8 Oct 2026US 2026/0313927 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Crystalline defect reduction in doped region8 Oct 2026US 2026/0314281 A1Texas Instruments Incorporated
- Heterojunction bipolar transistor8 Oct 2026US 2026/0314408 A1GLOBALFOUNDRIES U. S. Inc.
- Bipolar junction transistor co-integrated with nanosheet transistor1 Oct 2026US 2026/0304807 A1International Business Machines Corporation
Most cited
By later US patents
- Dopant precursors and processes596US 6,743,738 B2ASM America, Inc. · 2004
- Method of manufacturing a semiconductor device533US 5,098,638 AMatsushita Electric Industrial Co., Ltd. · 1992
- Field plate in heterojunction bipolar transistor with improved break-down voltage512US 9,324,846 B1Globalfoundries Inc. · 2016
- Printable semiconductor structures and related methods of making and assembling422US 7,799,699 B2The Board of Trustees of the University of Illinois · 2010
- Strained-semiconductor-on-insulator device structures396US 6,995,430 B2AmberWave Systems Corporation · 2006