Lateral bipolar junction transistor device and method of forming same

A circuit comprising:

• a plurality of MOS transistors, each MOS transistor including:
• a drain region;
• a first source region and a second source region;
• and
• a Pi or H shaped gate and gate oxide layer, the Pi or H shaped gate including a first gate portion extending between the drain region and the first source region, a second gate portion parallel to the first gate portion and extending between the drain region and the second source region, and a first connecting gate portion transverse to the first and second gate portions and connecting the first and second gate portions;
• wherein the plurality of MOS transistors include an nMOS transistor and a flipped-gate nMOS transistor.

A method of forming a lateral-bipolar junction transistor, the method comprising:

• providing a semiconductor substrate;
• forming an insulator region on the semiconductor substrate;
• forming a well region comprising a well semiconductor material of first conductivity type over the insulator region;
• forming an emitter region of a second conductivity type disposed in the well region;
• forming a first collector region of the second conductivity type and a second collector region of the second conductivity type in the well region;
• forming a Pi shaped or H shaped gate and a gate oxide layer, the Pi or H shaped gate including a first gate portion extending between the emitter region and the first collector region, a second gate portion parallel to the first gate portion and extending between the emitter region and the second collector region, and a first connecting gate portion transverse to the first and second gate portions and connecting the first and second gate portions;
• and
• forming a first base region disposed underneath the first gate portion and a second base region disposed underneath the second gate portion.