H10D 10/031
Of schottky bjts
Official title: {of Schottky BJTs}
H10D10/031 (Of schottky bjts) appears on 12 US grants and 11 published applications in this corpus.
Search patents in H10D- Granted patents
- 12
- Published applications
- 11
- Assignees
- 8
- Inventors
- 25
- Latest grant
- 30 Apr 2024
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 2014 | 0 | 3 |
| 2015 | 2 | 2 |
| 2016 | 4 | 2 |
| 2017 | 1 | 1 |
| 2018 | 2 | 0 |
| 2019 | 0 | 0 |
| 2020 | 0 | 1 |
| 2021 | 0 | 1 |
| 2022 | 1 | 1 |
| 2023 | 0 | 0 |
| 2024 | 2 | 0 |
By publication year.
Recent patents
- Voltage tunable solar blindness in TFS grown EG/SiC Schottky contact bipolar phototransistors30 Apr 2024US 11,973,160 B2University of South Carolina
- Digital circuits comprising quantum wire resonant tunneling transistors13 Feb 2024US 11,903,331 B2
- Voltage tunable solar blindness in TFS grown EG/SiC Schottky contact bipolar phototransistors19 Apr 2022US 11,309,449 B2University of South Carolina
- MOSFET with integrated schottky diode26 Jun 2018US 10,008,579 B2Alpha and Omega Semiconductor Incorporated
- 3D semiconductor device and system24 Apr 2018US 9,953,870 B2Monolithic 3D Inc.
- Voltage tunable solar blindness in tfs grown eg/sic schottky contact bipolar phototransistors7 Jul 2022US 2022/0216359 A1University of South Carolina
- Digital Circuits Comprising Quantum Wire Resonant Tunneling Transistors23 Dec 2021US 2021/0399198 A1
- Voltage tunable solar blindness in tfs grown eg/sic schottky contact bipolar phototransistors16 Apr 2020US 2020/0119217 A1University of South Carolina
- 3d semiconductor device and system3 Aug 2017US 2017/0221761 A1Monolithic 3D Inc.
- Lateral bipolar junction transistor (bjt) on a silicon-on-insulator (soi) substrate29 Dec 2016US 2016/0380087 A1STMicroelectronics S.r. l.
Most cited
By later US patents
- Termination trench for power MOSFET applications14US 9,105,494 B2Alpha & Omega Semiconductors, Ltd. · 2015
- Lateral bipolar junction transistor (BJT) on a silicon-on-insulator (SOI) substrate14US 9,748,369 B2STMicroelectronics S.r. l. · 2017
- Semiconductor device with termination structure for power MOSFET applications9US 9,356,022 B2Alpha and Omega Semiconductor Incorporated · 2016
- Bipolar junction transistors with reduced base-collector junction capacitance8US 9,093,491 B2International Business Machines Corporation · 2015
- Bipolar junction transistors with reduced base-collector junction capacitance6US 9,240,448 B2Globalfoundries Inc. · 2016