MOSFET with integrated schottky diode

A method for forming Schottky structure comprising:

• a) forming two trenches in a semiconductor material separated by a mesa;
• b) lining sidewalls and a bottom surface of the trenches with a dielectric material;
• c) disposing a conductive material in the trenches, wherein the disposed conductive material lines the dielectric material on the sidewalls and the bottom surface;
• d) removing the conductive material on the bottom surface of the trenches, wherein a first portion of conductive material remains on a first sidewall of each trench, and wherein a second portion of conductive material remains on a second sidewall of each trench, and wherein the first and second portions of conductive material are electrically isolated from each other and are maintained at different electric potentials;
• e) filling a space between the first and second portions of the conductive material with a trench filling insulator material;
• and
• f) forming a Schottky contact between the outermost sidewalls of the two trenches.