H10D 10/00
Bipolar junction transistors [bjt]
Official title: Bipolar junction transistors [BJT]
H10D10/00 (Bipolar junction transistors [bjt]) appears on 5,753 US grants and 4,409 published applications in this corpus.
Search patents in H10D- Granted patents
- 5,753
- Published applications
- 4,409
- Assignees
- 938
- Inventors
- 6,421
- Latest grant
- 6 Oct 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 17 | 0 |
| 1977 | 21 | 0 |
| 1978 | 24 | 0 |
| 1979 | 14 | 0 |
| 1980 | 17 | 0 |
| 1981 | 17 | 0 |
| 1982 | 20 | 0 |
| 1983 | 19 | 0 |
| 1984 | 22 | 0 |
| 1985 | 27 | 0 |
| 1986 | 27 | 0 |
| 1987 | 45 | 0 |
| 1988 | 45 | 0 |
| 1989 | 77 | 0 |
| 1990 | 85 | 0 |
| 1991 | 108 | 0 |
| 1992 | 114 | 0 |
| 1993 | 120 | 0 |
| 1994 | 144 | 0 |
| 1995 | 136 | 0 |
| 1996 | 120 | 0 |
| 1997 | 117 | 0 |
| 1998 | 115 | 0 |
| 1999 | 102 | 0 |
| 2000 | 104 | 0 |
| 2001 | 106 | 53 |
| 2002 | 148 | 188 |
| 2003 | 170 | 192 |
| 2004 | 219 | 213 |
| 2005 | 182 | 231 |
| 2006 | 150 | 172 |
| 2007 | 136 | 188 |
| 2008 | 108 | 189 |
| 2009 | 129 | 104 |
| 2010 | 170 | 150 |
| 2011 | 155 | 139 |
| 2012 | 115 | 149 |
| 2013 | 148 | 183 |
| 2014 | 193 | 198 |
| 2015 | 228 | 239 |
| 2016 | 201 | 203 |
| 2017 | 209 | 182 |
| 2018 | 198 | 169 |
| 2019 | 204 | 202 |
| 2020 | 161 | 171 |
| 2021 | 159 | 193 |
| 2022 | 152 | 141 |
| 2023 | 148 | 197 |
| 2024 | 157 | 141 |
| 2025 | 100 | 135 |
| 2026 | 50 | 87 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Subgroups
Granted patents
- H10D 10/01Manufacture or treatment3,528
- H10D 10/80Heterojunction bjts2,128
- H10D 10/40Vertical bjts1,765
- H10D 10/60Lateral bjts881
- H10D 10/311Thin-film bjts347
- H10D 10/231Tunnel bjts59
- H10D 10/221Schottky barrier bjts25
- H10D 10/241Avalanche bjts10
All 9 subgroupsShow fewer
Recent patents
- GaN power device and manufacturing method thereof6 Oct 2026US 12,757,448 B2Peking University
- Lateral bipolar junction transistor device and method of forming same29 Sep 2026US 12,747,993 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Heterojunction bipolar transistor and base-collector grade layer29 Sep 2026US 12,751,024 B2National Taiwan University
- Electronic components employing field ionization29 Sep 2026US 12,751,052 B2Psiquantum, Corp.
- Semiconductor device with enhanced avalanche ruggedness29 Sep 2026US 12,751,053 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Crystalline defect reduction in doped region8 Oct 2026US 2026/0313926 A1Texas Instruments Incorporated
- Electrostatic discharge circuitry for a high-voltage semiconductor device8 Oct 2026US 2026/0313927 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Crystalline defect reduction in doped region8 Oct 2026US 2026/0314281 A1Texas Instruments Incorporated
- Heterojunction bipolar transistor8 Oct 2026US 2026/0314408 A1GLOBALFOUNDRIES U. S. Inc.
- Bipolar junction transistor co-integrated with nanosheet transistor1 Oct 2026US 2026/0304807 A1International Business Machines Corporation
Most cited
By later US patents
- Transistor and semiconductor device4,015US 6,727,522 B1Japan Science and Technology Corporation · 2004
- Transistor and semiconductor device3,984US 7,064,346 B2Japan Science and Technology Agency · 2006
- Contact structure of semiconductor device1,334US 8,823,065 B2Taiwan Semiconductor Manufacturing Company.Ltd · 2014
- Dopant precursors and processes596US 6,743,738 B2ASM America, Inc. · 2004
- Method of manufacturing a semiconductor device533US 5,098,638 AMatsushita Electric Industrial Co., Ltd. · 1992