H10D 10/311
Thin-film bjts
Official title: {Thin-film BJTs}
H10D10/311 (Thin-film bjts) appears on 347 US grants and 252 published applications in this corpus.
Search patents in H10D- Granted patents
- 347
- Published applications
- 252
- Assignees
- 133
- Inventors
- 525
- Latest grant
- 26 May 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1978 | 2 | 0 |
| 1979 | 0 | 0 |
| 1980 | 0 | 0 |
| 1981 | 1 | 0 |
| 1982 | 0 | 0 |
| 1983 | 0 | 0 |
| 1984 | 0 | 0 |
| 1985 | 1 | 0 |
| 1986 | 1 | 0 |
| 1987 | 1 | 0 |
| 1988 | 1 | 0 |
| 1989 | 3 | 0 |
| 1990 | 7 | 0 |
| 1991 | 11 | 0 |
| 1992 | 4 | 0 |
| 1993 | 4 | 0 |
| 1994 | 12 | 0 |
| 1995 | 12 | 0 |
| 1996 | 6 | 0 |
| 1997 | 12 | 0 |
| 1998 | 9 | 0 |
| 1999 | 8 | 0 |
| 2000 | 6 | 0 |
| 2001 | 8 | 2 |
| 2002 | 10 | 12 |
| 2003 | 7 | 10 |
| 2004 | 12 | 11 |
| 2005 | 11 | 11 |
| 2006 | 8 | 11 |
| 2007 | 5 | 6 |
| 2008 | 5 | 13 |
| 2009 | 4 | 12 |
| 2010 | 18 | 8 |
| 2011 | 13 | 12 |
| 2012 | 8 | 9 |
| 2013 | 10 | 5 |
| 2014 | 8 | 15 |
| 2015 | 13 | 9 |
| 2016 | 14 | 11 |
| 2017 | 17 | 9 |
| 2018 | 10 | 10 |
| 2019 | 9 | 5 |
| 2020 | 4 | 3 |
| 2021 | 2 | 3 |
| 2022 | 4 | 2 |
| 2023 | 18 | 40 |
| 2024 | 17 | 9 |
| 2025 | 6 | 14 |
| 2026 | 5 | 0 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- Super-β bipolar junction transistor and manufacturing method therefor26 May 2026US 12,641,839 B2Csmc Technologies Fab2 Co., Ltd.
- Field-effect transistor structure including passive device or bipolar junction transistor with back side power distribution network (BSPDN)26 May 2026US 12,641,865 B2Samsung Electronics Co., Ltd.
- Utilization of sacrificial material for current electrode formation28 Apr 2026US 12,615,788 B2NXP B. V.
- High frequency heterojunction bipolar transistor devices31 Mar 2026US 12,593,461 B2Analog Devices, Inc.
- Semiconductor device including element isolation insulating film having thermal oxide film10 Mar 2026US 12,575,142 B2Denso Corporation
- Heterojunction bipolar transistors with terminals having a non-planar arrangement20 Nov 2025US 2025/0359098 A1GLOBALFOUNDRIES U. S. Inc.
- Bipolar transistor structure with ferroelectric material28 Aug 2025US 2025/0275223 A1GLOBALFOUNDRIES U. S. Inc.
- Monolithically integrated field effect and bipolar devices having co-fabricated structures28 Aug 2025US 2025/0275229 A1Analog Devices International Unlimited Company
- Monolithically integrated lateral bipolar device with voltage scaling28 Aug 2025US 2025/0275230 A1Analog Devices International Unlimited Company
- Folded cascode low noise amplifier21 Aug 2025US 2025/0267927 A1GLOBALFOUNDRIES U. S. Inc.
Most cited
By later US patents
- Transistor and semiconductor device4,015US 6,727,522 B1Japan Science and Technology Corporation · 2004
- Transistor and semiconductor device3,984US 7,064,346 B2Japan Science and Technology Agency · 2006
- Power IC having SOI structure283US 6,130,458 AKabushiki Kaisha Toshiba · 2000
- Power MOS transistor169US 6,365,932 B1Denso Corporation · 2002
- Channel collector transistor100US 4,868,624 ARegents of the University of Minnesota · 1989