H10D 10/60
Lateral bjts
Official title: Lateral BJTs
H10D10/60 (Lateral bjts) appears on 881 US grants and 771 published applications in this corpus.
Search patents in H10D- Granted patents
- 881
- Published applications
- 771
- Assignees
- 248
- Inventors
- 1,317
- Latest grant
- 29 Sep 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 7 | 0 |
| 1977 | 5 | 0 |
| 1978 | 3 | 0 |
| 1979 | 3 | 0 |
| 1980 | 5 | 0 |
| 1981 | 5 | 0 |
| 1982 | 8 | 0 |
| 1983 | 4 | 0 |
| 1984 | 6 | 0 |
| 1985 | 10 | 0 |
| 1986 | 7 | 0 |
| 1987 | 8 | 0 |
| 1988 | 6 | 0 |
| 1989 | 9 | 0 |
| 1990 | 9 | 0 |
| 1991 | 11 | 0 |
| 1992 | 11 | 0 |
| 1993 | 13 | 0 |
| 1994 | 14 | 0 |
| 1995 | 11 | 0 |
| 1996 | 11 | 0 |
| 1997 | 7 | 0 |
| 1998 | 9 | 0 |
| 1999 | 6 | 0 |
| 2000 | 8 | 0 |
| 2001 | 7 | 3 |
| 2002 | 10 | 9 |
| 2003 | 9 | 10 |
| 2004 | 11 | 14 |
| 2005 | 11 | 20 |
| 2006 | 12 | 17 |
| 2007 | 12 | 12 |
| 2008 | 9 | 18 |
| 2009 | 4 | 9 |
| 2010 | 14 | 25 |
| 2011 | 21 | 19 |
| 2012 | 15 | 15 |
| 2013 | 20 | 28 |
| 2014 | 39 | 46 |
| 2015 | 46 | 61 |
| 2016 | 59 | 58 |
| 2017 | 53 | 45 |
| 2018 | 57 | 41 |
| 2019 | 54 | 51 |
| 2020 | 40 | 22 |
| 2021 | 23 | 29 |
| 2022 | 25 | 25 |
| 2023 | 42 | 78 |
| 2024 | 47 | 42 |
| 2025 | 29 | 45 |
| 2026 | 16 | 29 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- Lateral bipolar junction transistor device and method of forming same29 Sep 2026US 12,747,993 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Semiconductor device with enhanced avalanche ruggedness29 Sep 2026US 12,751,053 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Electrostatic discharge circuitry for a high-voltage semiconductor device1 Sep 2026US 12,727,182 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Power device integration on a common substrate25 Aug 2026US 12,720,815 B2Silanna Asia Pte Ltd
- Semiconductor device and method of forming the same30 Jun 2026US 12,672,331 B2Powerchip Semiconductor Manufacturing Corporation
- Electrostatic discharge circuitry for a high-voltage semiconductor device8 Oct 2026US 2026/0313927 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Bipolar junction transistors with nanosheet structures and methods for manufacturing the same1 Oct 2026US 2026/0304808 A1Tokyo Electron Limited
- Lateral heterojunction bipolar transistor10 Sep 2026US 2026/0271357 A1GLOBALFOUNDRIES U. S. Inc.
- Semiconductor device20 Aug 2026US 2026/0247643 A1Samsung Electronics Co., Ltd.
- Semiconductor device20 Aug 2026US 2026/0247682 A1Denso Corporation
Most cited
By later US patents
- Lateral device structures using self-aligned fabrication techniques184US 4,508,579 AInternational Business Machines Corporation · 1985
- Device which functions as a lateral double-diffused insulated gate field effect transistor or as a bipolar transistor90US 5,146,298 A1992
- Four-terminal gate-controlled LVBJTs85US 8,115,280 B2Taiwan Semiconductor Manufacturing Company.Ltd · 2012
- Carbon nanotube device81US 6,465,813 B2Hyundai Electronics Industries Co., Ltd. · 2002
- Vertical transistor structure77US 5,627,395 AMotorola, Inc. · 1997