US 2026/0247643 A1 · SEMICONDUCTOR DEVICE

Abstract

A semiconductor device includes a field insulating film including a first surface and a second surface opposite to each other in a first direction, a first epitaxial pattern structure disposed on the first surface of the field insulating film and having a first conductivity type, a second epitaxial pattern structure spaced apart from the first epitaxial pattern structure in a second direction perpendicular to the first direction and having the first conductivity type, a third epitaxial pattern structure disposed between the first epitaxial pattern structure and the second epitaxial pattern structure and having a second conductivity type different from the first conductivity type, a first contact connected to the first epitaxial pattern structure, a second contact connected to the second epitaxial pattern structure, and a third contact connected to the third epitaxial pattern structure, wherein the third epitaxial pattern structure is in contact with the first epitaxial pattern structure and the second epitaxial pattern structure.

Claims20

Dependent claims

A semiconductor device comprising:

a field insulating film including a first surface and a second surface facing opposing one other in a first direction;
a first epitaxial pattern structure on the first surface of the field insulating film and having a first conductivity type;
a second epitaxial pattern structure spaced apart from the first epitaxial pattern structure in a second direction perpendicular to the first direction and having the first conductivity type;
a third epitaxial pattern structure between the first epitaxial pattern structure and the second epitaxial pattern structure along the second direction and having a second conductivity type different from the first conductivity type;
a first contact electrically connected to the first epitaxial pattern structure;
a second contact electrically connected to the second epitaxial pattern structure;
and
a third contact electrically connected to the third epitaxial pattern structure,
wherein the third epitaxial pattern structure is in contact with the first epitaxial pattern structure and the second epitaxial pattern structure.

6 more elements

A semiconductor device comprising:

a field insulating film including a first surface and a second surface opposing one another along a first direction;
a first epitaxial pattern structure on the first surface of the field insulating film and having a first conductivity type;
a second epitaxial pattern structure spaced apart from the first epitaxial pattern structure in a second direction perpendicular to the first direction and having the first conductivity type;
a third epitaxial pattern structure between the first epitaxial pattern structure and the second epitaxial pattern structure in the second direction and having a second conductivity type different from the first conductivity type;
a first contact electrically connected to the first epitaxial pattern structure;
a second contact electrically connected to the second epitaxial pattern structure;
and
a third contact electrically connected to the third epitaxial pattern structure,
wherein each of the first to third epitaxial pattern structures includes a fin-shaped pattern portion and an epitaxially-grown portion,
wherein the fin-shaped pattern portion of the third epitaxial pattern structure is spaced apart from the fin-shaped pattern portion of the first epitaxial pattern structure and the fin-shaped pattern portion of the second epitaxial pattern structure in the second direction, and
wherein the epitaxially-grown portion of the third epitaxial pattern structure is in contact with the epitaxially-grown portion of the first epitaxial pattern structure and the epitaxially-grown portion of the second epitaxial pattern structure.

8 more elements

A semiconductor device comprising:

a back wiring line including a first surface and a second surface opposing one another along a first direction;
a first epitaxial pattern structure on the first surface of the back wiring line and having a first conductivity type;
a second epitaxial pattern structure spaced apart from the first epitaxial pattern structure in a second direction perpendicular to the first direction and having the first conductivity type;
a third epitaxial pattern structure between the first epitaxial pattern structure and the second epitaxial pattern structure in the second direction and having a second conductivity type different from the first conductivity type;
a field insulating film between the back wiring line and the first epitaxial pattern structure;
a first contact in the field insulating film and electrically connected to the first epitaxial pattern structure;
a second contact in the field insulating film and electrically connected to the second epitaxial pattern structure;
and
a third contact in the field insulating film and electrically connected to the third epitaxial pattern structure,
wherein the third epitaxial pattern structure is in contact with the first epitaxial pattern structure and the second epitaxial pattern structure.

7 more elements

Dependencies are inferred from the claim text.

Semiconductor device

Life of this patent

Semiconductor device

Life of this patent

Abstract

Claims20