US 5,627,395 A · Vertical transistor structure

Abstract

A vertically raised transistor (10) is formed having a substrate (12). A conductive plug region (22) is selectively or epitaxially formed to vertically elevate the transistor (10). A first doped region (16a) and a second doped region (16b) are each electrically coupled to the conductive plug region (22) via sidewall contacts. The doped regions (16a and 16b) are used to form current electrode regions (26) within the conductive plug region (22). A channel region separates the current electrodes (26). A gate dielectric layer (28) is formed to overlie the channel region. A conductive layer (30) is formed to overlie the gate dielectric layer (28). Conductive layer (30) forms a gate electrode for the transistor (10). The vertical raised transistor (10) and conductive plug region (22) provide improved device isolation and improved device operation.

Claims20

Dependent claims

A vertically raised transistor comprising:

a substrate having a surface;
a first dielectric layer overlying the substrate;
a doped layer overlying the first dielectric layer, the doped layer being doped with dopant atoms;
a second dielectric layer overlying the doped layer;
an opening formed through a portion of the first dielectric layer, a portion of the doped layer, and a portion of the second dielectric layer which exposes the surface of the substrate and forms a sidewall of the doped layer;
a conductive plug region formed within the opening, the conductive plug region being laterally adjacent the doped layer and electrically coupled to the doped layer by a sidewall connection;
a first current electrode and a second current electrode formed in the conductive plug region and in electrical contact with a portion of the doped layer, the first and second current electrodes being physically separated by a channel region;
and
a control electrode overlying the channel region.

6 more elements

A semiconductor structure comprising:

a substrate having a surface, the substrate having a conductivity type;
a vertical transistor formed overlying the substrate and having a first current electrode, a second current electrode which overlies the first current electrode, a channel region which separates the first current electrode from the second current electrode, and a gate electrode which is adjacent the channel region, the vertical transistor being characterized as having current flow substantially perpendicular to the surface of the substrate, the first and second current electrodes of the vertical transistor having a conductivity type different from the conductivity type of the substrate;
and
a lateral transistor overlying the vertical transistor wherein a portion of the vertically raised lateral transistor is electrically coupled to the second current electrode of the vertical transistor, the lateral transistor being characterized as having current flow which is substantially parallel to the surface of the substrate, the lateral transistor having a channel region which overlies the channel region of the vertical transistor.

1 more element

Dependencies are inferred from the claim text.

Vertical transistor structure

Life of this patent

Vertical transistor structure

Life of this patent

Abstract

Claims20