Semiconductor device and method of forming the same

A semiconductor device, comprising:

• a substrate comprising a first active region, a second active region, and a third active region;
• a device isolation structure defining the first active region, the second active region, and the third active region in the substrate;
• a first device, a second device and a third device, wherein the first device and the second device are respectively buried in the first active region and the second active region of the substrate, and the third device is disposed on the third active region of the substrate;
• an insulation layer disposed on the substrate and comprising a first portion covering the first device, a second portion covering the second device, and a third portion surrounding a portion of the third device, wherein a horizontal area of the first portion is greater than a horizontal area of the third portion;
• and
• a first dummy gate structure disposed on the first active region and embedded in the first portion of the insulation layer,
• wherein the first device comprises:
• a collector pattern buried in a first region of the first active region that is defined by the device isolation structure and a first isolation pattern disposed in the first active region and surrounded by the device isolation structure;
• a base pattern buried in a second region of the first active region that is defined by the first isolation pattern and a second isolation pattern disposed in the first active region and surrounded by the first isolation pattern;
• and
• an emitter pattern buried in a third region of the first active region that is defined by the second isolation pattern,
• wherein the first dummy gate structure comprises a first dummy pattern, a second dummy pattern and a third dummy pattern spaced apart from each other, wherein the first dummy pattern is disposed on a portion of the device isolation structure defining the first active region and surrounds the collector pattern in a top view, the second dummy pattern is disposed on the first isolation pattern and surrounds the base pattern in the top view, and the third dummy pattern is disposed on the second isolation pattern and surrounds the emitter pattern in the top view,
• wherein the first portion of the insulation layer comprises a first insulation pattern, a second insulation pattern, and a third insulation pattern spaced apart from each other, and wherein:
• the first insulation pattern is disposed on the first region and between the first dummy pattern and the second dummy pattern,
• the second insulation pattern is disposed on the second region and between the second dummy pattern and the third dummy pattern, and
• the third insulation pattern is disposed on the third region and surrounded by the third dummy pattern.