Electrostatic discharge circuitry for a high-voltage semiconductor device

A semiconductor device, comprising:

• a device circuit;
• an electrostatic discharge (ESD) circuit coupled with the device circuit;
• and
• an ESD triggering circuit, coupled with the ESD circuit and the device circuit, comprising:
• a substrate;
• and
• a PNP ESD triggering device, in the substrate, comprising:
• an n-doped base including a first plurality of fin-shaped structures;
• a p-doped collector including a second plurality of fin-shaped structures,
• wherein a first portion of the substrate is located between a first n-doped well of the n-doped base and a p-doped well of the p-doped collector;
• and
• a p-doped emitter including a third plurality of fin-shaped structures,
• wherein a second portion of the substrate is located between the p-doped well of the p-doped collector and a second n-doped well of the p-doped emitter;
• a plurality of n-doped barrier regions in the substrate, comprising:
• a first n-doped barrier region under the first n-doped well of the n-doped base;
• and
• a second n-doped barrier region under the second n-doped well of the p-doped emitter,
• wherein a third portion of the substrate is located between the first n-doped barrier region and the second n-doped barrier region;
• and
• a plurality of deep n-doped barrier regions in the substrate, comprising:
• a first deep n-doped barrier region under the first n-doped barrier region;
• and
• a second deep n-doped barrier region under the second n-doped barrier region,
• wherein a fourth portion of the substrate is located between the first deep n-doped barrier region and the second deep n-doped barrier region,
• wherein the fourth portion of the substrate is located under the third portion of the substrate, and
• wherein the third portion of the substrate and the fourth portion of the substrate are located under the p-doped well of the p-doped collector.

A semiconductor device, comprising:

• a substrate;
• a plurality of shallow trench isolation (STI) regions in the substrate;
• a PNP electrostatic discharge (ESD) triggering device comprising:
• an n-doped base in the substrate between a first STI region and a second STI region of the plurality of STI regions;
• a p-doped collector in the substrate between the second STI region and a third STI region of the plurality of STI regions,
• wherein a first portion of the substrate is located between a first n-doped well of the n-doped base and a p-doped well of the p-doped collector;
• and
• a p-doped emitter in the substrate between the third STI region and a fourth STI region of the plurality of STI regions,
• wherein a second portion of the substrate is located between the p-doped well of the p-doped collector and a second n-doped well of the p-doped emitter;
• a first n-doped barrier region in the substrate under the n-doped base;
• a second n-doped barrier region in the substrate under the p-doped emitter, wherein a third portion of the substrate is located between the first n-doped barrier region and the second n-doped barrier region;
• a first deep n-doped barrier region under the first n-doped barrier region;
• and
• a second deep n-doped barrier region under the second n-doped barrier region,
• wherein a fourth portion of the substrate is located between the first deep n-doped barrier region and the second deep n-doped barrier region,
• wherein the fourth portion of the substrate is located under the third portion of the substrate, and
• wherein the third portion of the substrate and the fourth portion of the substrate are located under the p-doped well of the p-doped collector.