H10D 10/40
Vertical bjts
Official title: Vertical BJTs {(Vertical Heterojunction BJTs H10D10/821)}
H10D10/40 (Vertical bjts) appears on 1,765 US grants and 1,498 published applications in this corpus.
Search patents in H10D- Granted patents
- 1,765
- Published applications
- 1,498
- Assignees
- 427
- Inventors
- 2,392
- Latest grant
- 21 Jul 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 3 | 0 |
| 1977 | 9 | 0 |
| 1978 | 11 | 0 |
| 1979 | 8 | 0 |
| 1980 | 7 | 0 |
| 1981 | 7 | 0 |
| 1982 | 10 | 0 |
| 1983 | 5 | 0 |
| 1984 | 9 | 0 |
| 1985 | 7 | 0 |
| 1986 | 10 | 0 |
| 1987 | 13 | 0 |
| 1988 | 10 | 0 |
| 1989 | 26 | 0 |
| 1990 | 25 | 0 |
| 1991 | 24 | 0 |
| 1992 | 28 | 0 |
| 1993 | 29 | 0 |
| 1994 | 30 | 0 |
| 1995 | 31 | 0 |
| 1996 | 29 | 0 |
| 1997 | 24 | 0 |
| 1998 | 29 | 0 |
| 1999 | 26 | 0 |
| 2000 | 26 | 0 |
| 2001 | 28 | 21 |
| 2002 | 35 | 38 |
| 2003 | 28 | 41 |
| 2004 | 38 | 51 |
| 2005 | 46 | 52 |
| 2006 | 32 | 43 |
| 2007 | 36 | 64 |
| 2008 | 27 | 70 |
| 2009 | 43 | 41 |
| 2010 | 61 | 58 |
| 2011 | 56 | 46 |
| 2012 | 45 | 61 |
| 2013 | 62 | 77 |
| 2014 | 71 | 77 |
| 2015 | 88 | 103 |
| 2016 | 90 | 98 |
| 2017 | 86 | 89 |
| 2018 | 84 | 58 |
| 2019 | 85 | 79 |
| 2020 | 62 | 59 |
| 2021 | 56 | 54 |
| 2022 | 40 | 43 |
| 2023 | 44 | 57 |
| 2024 | 45 | 43 |
| 2025 | 31 | 44 |
| 2026 | 10 | 31 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Subgroups
Granted patents
Recent patents
- Semiconductor device with a monocrystalline extrinsic base and method therefor21 Jul 2026US 12,690,207 B2NXP B. V.
- Methods to process 3D semiconductor devices and structures which have metal layers16 Jun 2026US 12,660,326 B2Monolithic 3D Inc.
- Semiconductor device and electronic apparatus9 Jun 2026US 12,652,854 B2Rohm Co., Ltd.
- Semiconductor device26 May 2026US 12,641,807 B2Samsung Electronics Co., Ltd.
- Methods for making bipolar junction transistors including emitter-base and base-collector superlattices19 May 2026US 12,635,155 B2Atomera Incorporated
- Crystalline defect reduction in doped region8 Oct 2026US 2026/0313926 A1Texas Instruments Incorporated
- Crystalline defect reduction in doped region8 Oct 2026US 2026/0314281 A1Texas Instruments Incorporated
- Bipolar junction transistor co-integrated with nanosheet transistor1 Oct 2026US 2026/0304807 A1International Business Machines Corporation
- Power bjt device with single pulse current strong turn-off capability, circuit breaker, and method24 Sep 2026US 2026/0291492 A1Xi'an Jiaotong Univestity
- Structure with spacer adjacent collector and related methods24 Sep 2026US 2026/0293231 A1GLOBALFOUNDRIES U. S. Inc.
Most cited
By later US patents
- Method of manufacturing a semiconductor device533US 5,098,638 AMatsushita Electric Industrial Co., Ltd. · 1992
- Integrated circuit including inverted dielectric isolation331US 6,084,284 A2000
- Method of forming transistors with poly-sidewall contacts utilizing deposition of polycrystalline and insulating layers combined with selective etching and oxidation of said layers135US 4,663,831 AMotorola, Inc. · 1987
- Systems and methods for controlling release of transferable semiconductor structures129US 9,929,053 B2X-Celeprint Limited · 2018
- BICDMOS structures126US 5,426,328 ASiliconix Incorporated · 1995