H10D 10/441
Having an emitter-base junction ending at a main surface of the body
Official title: {having an emitter-base junction ending at a main surface of the body and a base-collector junction ending at a lateral surface of the body}
H10D10/441 (Having an emitter-base junction ending at a main surface of the body) appears on 160 US grants and 82 published applications in this corpus.
Search patents in H10D- Granted patents
- 160
- Published applications
- 82
- Assignees
- 71
- Inventors
- 302
- Latest grant
- 9 Dec 2025
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 2 | 0 |
| 1977 | 2 | 0 |
| 1978 | 3 | 0 |
| 1979 | 4 | 0 |
| 1980 | 2 | 0 |
| 1981 | 3 | 0 |
| 1982 | 9 | 0 |
| 1983 | 3 | 0 |
| 1984 | 4 | 0 |
| 1985 | 5 | 0 |
| 1986 | 6 | 0 |
| 1987 | 2 | 0 |
| 1988 | 5 | 0 |
| 1989 | 9 | 0 |
| 1990 | 6 | 0 |
| 1991 | 6 | 0 |
| 1992 | 5 | 0 |
| 1993 | 6 | 0 |
| 1994 | 5 | 0 |
| 1995 | 2 | 0 |
| 1996 | 2 | 0 |
| 1997 | 1 | 0 |
| 1998 | 1 | 0 |
| 1999 | 0 | 0 |
| 2000 | 1 | 0 |
| 2001 | 0 | 1 |
| 2002 | 1 | 0 |
| 2003 | 1 | 0 |
| 2004 | 0 | 0 |
| 2005 | 0 | 1 |
| 2006 | 0 | 0 |
| 2007 | 0 | 1 |
| 2008 | 2 | 2 |
| 2009 | 0 | 4 |
| 2010 | 5 | 3 |
| 2011 | 1 | 2 |
| 2012 | 0 | 2 |
| 2013 | 1 | 5 |
| 2014 | 4 | 9 |
| 2015 | 7 | 5 |
| 2016 | 7 | 5 |
| 2017 | 2 | 2 |
| 2018 | 5 | 5 |
| 2019 | 9 | 9 |
| 2020 | 10 | 9 |
| 2021 | 2 | 0 |
| 2022 | 2 | 4 |
| 2023 | 2 | 4 |
| 2024 | 3 | 5 |
| 2025 | 2 | 2 |
| 2026 | 0 | 2 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
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Most cited
By later US patents
- Method of manufacturing a semiconductor device533US 5,098,638 AMatsushita Electric Industrial Co., Ltd. · 1992
- Process for fabricating a bipolar transistor with a thin base and an abrupt base-collector junction62US 4,523,370 ANCR Corporation · 1985
- Self-aligned process for providing an improved high performance bipolar transistor60US 4,318,751 AInternational Business Machines Corporation · 1982
- High frequency analog transistors, method of fabrication and circuit implementation51US 5,668,397 AHarris Corporation · 1997
- Method of making high performance bipolar transistor with polysilicon base contacts47US 4,319,932 AInternational Business Machines Corporation · 1982