Unlanded thermal dissipation pillar adjacent active contact

A bipolar transistor, comprising:

• an emitter, a collector and a base over a substrate;
• a first active contact landed on a portion of the emitter and a second active contact landed on the portion of the emitter, the first and second active contacts including a first body of a first material;
• and
• a thermal dissipation pillar between the first active contact and the second active contact and unlanded on but over the portion of the emitter, the thermal dissipation pillar including a second body of a second material having a higher thermal conductivity than the first material.

An electrical device of an integrated circuit, the electrical device comprising:

• a portion that generates heat;
• a first dielectric layer over the portion;
• an active contact extending through the first dielectric layer and landed on the portion, the active contact including a first body of a first material;
• a thermal dissipation pillar adjacent the active contact, the thermal dissipation pillar having a lowermost end over the first dielectric layer and unlanded on but over the portion, the thermal dissipation pillar including a second body of a second material having a higher thermal conductivity than the first material;
• a second dielectric layer over the active contact and the thermal dissipation pillar;
• and
• a wire in the second dielectric layer in thermal communication with the thermal dissipation pillar and in electrical communication with the active contact, wherein the wire is over and in physical contact with a top surface of the active contact and over a side surface of the active contact.