Semiconductor devices, semiconductor structures and methods for fabricating a semiconductor structure
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsChia-Chung Chen, Szu-Lin Liu, Jaw-Juinn Horng, Hui-Zhong Zhuang, Chih-Liang Chen, Ya Yun Liu
Life of this patent
Estimating the term…
Abstract
A semiconductor device includes a bipolar junction transistor (BJT) structure including emitters in a first well having a first conductive type, collectors in respective second wells, the second wells having a second conductive type different from the first conductive type and being spaced apart from each other with the first well therebetween, and bases in the first well and between the emitters and the collectors. The BJT structure includes active regions having different widths that form the emitters, the collectors, and the bases.
Claims20
A semiconductor device, comprising:
- a bipolar junction transistor (BJT) structure comprising:
- emitters in a first well having a first conductive type;
- collectors in respective second wells, the second wells having a second conductive type different from the first conductive type and being spaced apart from each other with the first well therebetween;
- and
- bases in the first well and between the emitters and the collectors, wherein the BJT structure comprises active regions having different widths that form the emitters, the collectors, and the bases;
- wherein the BJT structure is formed in a transistor cell comprising a plurality of standard cells with different cell heights, and the standard cells forming the collectors are smaller in height than the standard cells forming the bases, and the standard cells forming the bases are smaller in height than the standard cells forming the emitters.
A semiconductor structure, comprising:
- a first well region on a substrate, the first well region having a first type doping;
- a second well region and a third well region on opposing sides of the first well region on the substrate, the second well region and the third well region having a second type doping different from the first type doping;
- and
- a bipolar junction transistor (BJT) structure having a first emitter formed in a first transistor active region in the first well region, a first base formed in a second transistor active region in the first well region, and a first collector formed in a third transistor active region in the second well region;
- and a second emitter formed in a fourth transistor active region in the first well region, a second base formed in a fifth transistor active region in the first well region, and a second collector formed in a sixth transistor active region in the third well region;
- wherein the BJT structure is formed in a plurality of standard cells with different cell heights, and the standard cells forming the first collector and the second collector are smaller in height than the standard cells forming the first base and the second base, and the standard cells forming the first base and the second base are smaller in height than the standard cells forming the first emitter and the second emitter.
A semiconductor structure, comprising:
- a bipolar junction transistor (BJT) structure including a plurality of first standard cells with different widths of active regions, the BJT structure comprising:
- a first emitter formed in a first transistor active region in a first well region having a first type doping;
- a first base formed in a second transistor active region in the first well region;
- and
- a first collector formed in a third transistor active region in a second well region, wherein the second well region has a second type doping different from the first type doping, and the second transistor active region is between the first transistor active region and the third transistor active region;
- wherein the first standard cells have different cell heights, and the first standard cell forming the first collector is smaller in height than the first standard cell forming the first base, and the first standard cell forming the first base is smaller in height than the first standard cell forming the first emitter.
Dependencies are inferred from the claim text.