Semiconductor devices, semiconductor structures and methods for fabricating a semiconductor structure

A semiconductor structure, comprising:

• a bipolar junction transistor (BJT) structure formed by a plurality of standard cells with different widths of active regions, the BJT structure comprising:
• a first emitter in a first one of the active regions;
• a first base in a second one of the active regions;
• and
• a first collector in a third one of the active regions, wherein the second active region is between the first active region and the third active region;
• wherein the standard cell forming the first collector is smaller in height than the standard cell forming the first base, and the standard cell forming the first base is smaller in height than the standard cell forming the first emitter.

A method for fabricating a semiconductor structure, the method comprising:

• forming a plurality of standard cells with different widths of active regions by:
• forming a first emitter of a bipolar junction transistor (BJT) structure in a first one of the active regions;
• forming a first base of the BJT structure in a one of the second active regions;
• and
• forming a first collector of the BJT structure in a third one of the active regions, wherein the second active region is between the first active region and the third active region,
• wherein the standard cell forming the first collector is smaller in height than the standard cell forming the first base, and the standard cell forming the first base is smaller in height than the standard cell forming the first emitter.