Semiconductor structures and manufacturing methods thereof
AssigneeEnkris Semiconductor, Inc.
InventorKai Cheng
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Abstract
The present disclosure provides a semiconductor structure and a manufacturing method thereof. In the manufacturing method, a first P-type semiconductor layer is provided, and an N-type semiconductor layer and a second P-type semiconductor layer are formed in sequence on the first P-type semiconductor layer. The first P-type semiconductor layer, the N-type semiconductor layer and the second P-type semiconductor layer all include a GaN-based material. When the first P-type semiconductor layer is provided, its upper surface is controlled to be a Ga surface; when the N-type semiconductor layer is formed, its upper surface is controlled to be an N surface; when the second P-type semiconductor layer is formed, its upper surface is controlled to be an N surface.
Claims20
A manufacturing method of a semiconductor structure, comprising:
- providing a first P-type semiconductor layer, wherein the first P-type semiconductor layer comprises a GaN-based material, and an upper surface of the first P-type semiconductor layer is a Ga surface;
- forming an N-type semiconductor layer on the first P-type semiconductor layer, wherein the N-type semiconductor layer comprises a GaN-based material, and an upper surface of the N-type semiconductor layer is an N surface;
- forming a second P-type semiconductor layer on the N-type semiconductor layer, wherein the second P-type semiconductor layer comprises a GaN-based material, and an upper surface of the second P-type semiconductor layer is an N surface;
- removing the second P-type semiconductor layer in a collector electrode region and the N-type semiconductor layer in the collector electrode region by wet etching, such that etching is started from the N surface of the second P-type semiconductor layer and automatically stopped on the Ga surface of the first P-type semiconductor layer, so as to expose a part of the first P-type semiconductor layer;
- and
- removing the second P-type semiconductor layer in a base electrode region by dry etching to expose a part of the N-type semiconductor layer.
A manufacturing method of a semiconductor structure, comprising:
- providing an N-type semiconductor layer, wherein the N-type semiconductor layer comprises a GaN-based material, and an upper surface of the N-type semiconductor layer is a Ga surface;
- forming a second P-type semiconductor layer on the N-type semiconductor layer, wherein the second P-type semiconductor layer comprises a GaN-based material, and an upper surface of the second P-type semiconductor layer is an N surface;
- and
- removing a part of the second P-type semiconductor layer by wet etching, such that etching is started from the N surface of the second P-type semiconductor layer and automatically stopped on the Ga surface of the N-type semiconductor layer, so as to expose a part of the N-type semiconductor layer.
Dependencies are inferred from the claim text.