H10D 10/461
Inverted vertical bjts
Official title: {Inverted vertical BJTs}
H10D10/461 (Inverted vertical bjts) appears on 55 US grants and 39 published applications in this corpus.
Search patents in H10D- Granted patents
- 55
- Published applications
- 39
- Assignees
- 31
- Inventors
- 114
- Latest grant
- 19 Nov 2024
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 1 | 0 |
| 1977 | 2 | 0 |
| 1978 | 3 | 0 |
| 1979 | 1 | 0 |
| 1980 | 0 | 0 |
| 1981 | 0 | 0 |
| 1982 | 1 | 0 |
| 1983 | 0 | 0 |
| 1984 | 0 | 0 |
| 1985 | 0 | 0 |
| 1986 | 2 | 0 |
| 1987 | 2 | 0 |
| 1988 | 0 | 0 |
| 1989 | 1 | 0 |
| 1990 | 2 | 0 |
| 1991 | 3 | 0 |
| 1992 | 1 | 0 |
| 1993 | 0 | 0 |
| 1994 | 2 | 0 |
| 1995 | 0 | 0 |
| 1996 | 0 | 0 |
| 1997 | 0 | 0 |
| 1998 | 0 | 0 |
| 1999 | 0 | 0 |
| 2000 | 0 | 0 |
| 2001 | 0 | 0 |
| 2002 | 1 | 1 |
| 2003 | 0 | 1 |
| 2004 | 1 | 0 |
| 2005 | 0 | 0 |
| 2006 | 0 | 1 |
| 2007 | 0 | 1 |
| 2008 | 0 | 0 |
| 2009 | 0 | 1 |
| 2010 | 0 | 0 |
| 2011 | 2 | 0 |
| 2012 | 0 | 0 |
| 2013 | 0 | 1 |
| 2014 | 2 | 7 |
| 2015 | 1 | 3 |
| 2016 | 3 | 2 |
| 2017 | 1 | 2 |
| 2018 | 3 | 3 |
| 2019 | 8 | 9 |
| 2020 | 4 | 2 |
| 2021 | 5 | 2 |
| 2022 | 0 | 0 |
| 2023 | 2 | 2 |
| 2024 | 1 | 0 |
| 2025 | 0 | 1 |
By publication year. Applications have been published since 2001.
Recent patents
- Power semiconductor device comprising a thyristor and a bipolar junction transistor19 Nov 2024US 12,148,818 B2Hitachi Energy Ltd
- Bipolar junction transistors with duplicated terminals5 Sep 2023US 11,749,727 B2GLOBALFOUNDRIES U. S. Inc.
- Integrated circuit devices with well regions and methods for forming the same22 Aug 2023US 11,735,485 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Bipolar junction transistor with vertically integrated resistor30 Nov 2021US 11,189,701 B1International Business Machines Corporation
- Integrated circuit devices with well regions22 Jun 2021US 11,043,431 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Bipolar junction transistor with dielectric isolation structures17 Jul 2025US 2025/0234634 A1
- Power Semiconductor Device Comprising a Thyristor and a Bipolar Junction Transistor20 Apr 2023US 2023/0118951 A1Hitachi Energy Switzerland AG
- Bipolar junction transistors with duplicated terminals30 Mar 2023US 2023/0096328 A1GLOBALFOUNDRIES U. S. Inc.
- Integrated Circuit Devices with Well Regions and Methods for Forming the Same30 Sep 2021US 2021/0305099 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Semiconductor device19 Aug 2021US 2021/0257358 A1NXP B.V.
Most cited
By later US patents
- Trenched bipolar transistor structures111US 5,311,055 AThe United States of America as represented by the Secretary of the Navy · 1994
- Semiconductor device and method of producing the same31US 6,461,927 B1Hitachi, Ltd. · 2002
- GaAs/GaAlAs Heterojunction bipolar integrated circuit devices23US 4,573,064 ATexas Instruments Incorporated · 1986
- Integrated circuit mesa bipolar device on insulating substrate incorporating Schottky barrier contact18US 4,127,860 ARCA Corporation · 1978
- Integrated injection logic having high inverse current gain16US 3,982,266 ATexas Instruments Incorporated · 1976