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US 4,127,860 AGranted
Integrated circuit mesa bipolar device on insulating substrate incorporating Schottky barrier contact
AssigneeRCA Corporation
InventorsHoward R. Beelitz, Donald R. Preslar
Life of this patent
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Abstract
A PNP bipolar transistor is protected by a Schottky barrier, in which an N- base of the device forms a Schottky diode with a metallizing which is used as the collector. No separate P- semiconductor region is provided as the collector. Such transistors may be combined with NPN transistors having integrated but distinct Schottky and collector electrodes.
Claims9
A semiconductor integrated circuit device comprising:
- an insulating substrate having a surface,
- a first mesa of semiconductor material on said surface, said semiconductor material being of one type conductivity, said first mesa having a surface relatively parallel to said surface of said substrate, and side sufaces, and
- means including said mesa defining a vertical current flow type bipolar element, said means comprising a first region of conductivity type opposite to said one type in said mesa and defining a PN junction with the remaining material of said first mesa, first terminal means on one of said side surfaces making ohmic contact to said remaining material, second terminal means making Schottky barrier rectifying contact to said remaining material, and third terminal means making ohmic contact with said first region, one of said second and said third terminal means being located on another one of said side surfaces, and the other one of said second and said third terminal means being located on said relatively parallel surface of said first mesa.
Dependencies are inferred from the claim text.