Semiconductor device
AssigneeNXP B.V.
InventorsPetrus Hubertus Cornelis Magnee, Mustafa Acar, Dominicus Martinus Wilhelmus Leenaerts
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Abstract
A semiconductor device is described including a substrate and a plurality of layers. The semiconductor device includes a cascode arrangement of a first bipolar transistor and a second bipolar transistor. A first-bipolar-transistor-collector of the first bipolar transistor and a second-bipolar-transistor-emitter of the second bipolar transistor are at least partially located in a common region in the same layer of the semiconductor device.
Claims20
A semiconductor device comprising a substrate, a plurality of layers located on or in the substrate and a lateral cascode arrangement of a first bipolar transistor and a second bipolar transistor, wherein the first bipolar transistor comprises a first-bipolar-transistor-collector, the second bipolar transistor comprises a second-bipolar-transistor-emitter and wherein the first-bipolar-transistor-collector and the second-bipolar-transistor-emitter are at least partially located in a common region in one of said plurality of layers.
A silicon-germanium BiCMOS device comprising a substrate, a plurality of layers located on or in the substrate and a lateral cascode arrangement of a first bipolar transistor and a second bipolar transistor, wherein the first bipolar transistor comprises a first-bipolar-transistor-collector, the second bipolar transistor comprises a second-bipolar-transistor-emitter and wherein the first-bipolar-transistor-collector and the second-bipolar-transistor-emitter are at least partially located in a common region in one of said plurality of layers.
An RF amplifier comprising a substrate, a plurality of layers located on or in the substrate and a lateral cascode arrangement of a first bipolar transistor and a second bipolar transistor, wherein the first bipolar transistor comprises a first-bipolar-transistor-collector, the second bipolar transistor comprises a second-bipolar-transistor-emitter and wherein the first-bipolar-transistor-collector and the second-bipolar-transistor-emitter are at least partially located in a common region in one of said plurality of layers.
Dependencies are inferred from the claim text.