US 4,573,064 AGranted

GaAs/GaAlAs Heterojunction bipolar integrated circuit devices

AssigneeTexas Instruments Incorporated

InventorsWilliam V. McLevige, Han-Tzong Yuan, Walter M. Duncan, Friedrich H. Doerbeck

Life of this patent

Estimating the term…

Loading patent…

Abstract

Bipolar transistors and other electronic structures are fabricated on a gallium arsenide (GaAs) substrate to form an integrated circuit device. This integrated circuit device is made possible by development of an ion implant technique which uses an acceptor material to create a P type region, boron or protons to create insulating regions, and silicon or selenium to create an N type region. The use of an ion implant technique avoids the difficult problems encountered in diffusion methods, and, due to the precise control available with ion implantation, makes possible the fabrication of IC quality transistors consistently over a substrate. This same control enables the fabrication of integrated circuits with improved device packing density and reduced parasitic parameters.

Claims31

Dependent claims

An integrated circuit device comprising:

substrate means including at least a body of a first III-V compound semiconductor material of one conductivity type and defining an emitter region;
a first layer of a second III-V compound semiconductor material of the other conductivity type disposed on said body defining said emitter region, said second III-V compound semiconductor material having a bandgap which is smaller than the bandgap of said first III-V compound semiconductor material, said first layer of said second III-V compound semiconductor material of the other conductivity type defining a base region;
a second layer of said second III-V compound semiconductor material being disposed on said first layer and being of said one conductivity type, said second layer of said second III-V compound semiconductor material of said one conductivity type defining a collector region;
and
electrical contact means respectively coupled to each of said emitter, base and collector regions.

2 more elements

Dependencies are inferred from the claim text.